Four-single quantum wells composed of the ternary non-magnetic compounds Cd_{0.93}Zn_{0.07}Te (well width = 13, 19, 40, 90 Å), separated by the quaternary magnetic-compound Cd_{0.48}Zn_{0.04}Mn_{0.48}Te on (100)GaAs substrate were grown by MBE, and exhibited clear and distinctive photoluminescence lines corresponding to each quantum well. Double luminescence peaks with closely spaced within one well were observed from 90 Å and 40 Å quantum wells. Temperature and magnetic-field study revealed characteristic luminescence features associated with a bound exciton near the interface rather than with one monolayer fluctuation.
Precise magnetoresistance measurements on microstructures of photolithographically patterned PbSe epilayers have been performed in the magnetic field range up to 17 Τ. Unusually large, reproducible magnetoconductance fluctuations have been observed. The fluctuation amplitude decreases exponentially with the magnetic field. A correlation magnetic field of the fluctuations corresponds to the Aharonov-Bohm effect which involves electron trajectories much smaller than the electron mean free path. This points strongly to the ballistic, not diffusive, origin of the observed phenomenon.
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