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In this work, the pulse electrodeposition technique was employed for the first time to deposit AgInSe_2 films. The films were deposited at room temperature from a bath containing Analar grade 10 mM silver sulphate, 50 mM indium sulphate and 5 mM SeO_2. The deposition potential was maintained at -0.98 V (SCE). Tin oxide coated glass substrates (5.0 Ω/sq) were used for depositing the films. The duty cycle was varied in the range of 6-50%. The X-ray diffraction pattern of the thin films deposited at different duty cycles indicated the peaks corresponding to AgInSe_2. The transmission spectra exhibited interference fringes. Resistivity of the films increased from 1.5 Ω cm to 12.4 Ω cm. Mobility increased with duty cycle. Carrier density decreased with duty cycle. The photovoltaic parameters of CdS/AgInSe_2 solar cells increased with duty cycle.
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