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Anomalous Behavior of the Hall Effect in III-V Heterostructures

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Dziuba Z., Górska M., Marczewski J., Przesławski T., Regiński K.
Acta Physica Polonica A
|
2000
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vol. 97
|
issue 2
331-336
EN
The Hall effect and magnetoresistance were measured in the InAs/GaAs heterostructure at temperatures from 300 K down to 3 K, in a magnetic field range from 0.01 to 1.5 T. The anomalous magnetic field dependence of the Hall coefficient in the InAs/GaAs heterostructure in magnetic fields below 0.1 T was explained as due to an extraordinary Hall effect caused by skew scattering on dislocations.
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