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Admittance and Permittivity in Doped Layered TlGaSe_2 Single Crystals

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Dawood S., Fedotov A., Mammadov T., Zukowski P., Koltunowicz T., Saad A., Drozdov N.
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vol. 125
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issue 6
1267-1271
EN
In doped TlGaSe_2 crystals the phase transitions at low temperatures (100-170 K) were observed using admittance and dielectric spectroscopy in a temperature range of 80-320 K. The admittance and permittivity measurements in the studied samples indicated that after Fe or Tb doping by impurities with concentrations N_{imp} < 0.5 at.% nonequilibrium electronic phase transition is observed. Doping with N_{imp} > 0.5 at.% resulted in full suppression of this phase transition presence.
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