Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl
Preferences help
Polish version English version Language
enabled [disable] Abstract
Number of results

Results found: 2

Number of results on page
first rewind previous Page / 1 next fast forward last

Search results

help Sort By:

help Limit search:
first rewind previous Page / 1 next fast forward last
1
Content available remote

External Noise Effects on the Electron Velocity Fluctuations in Semiconductors

100%
Persano Adorno D., Pizzolato N., Spagnolo B.
Acta Physica Polonica A
|
2008
|
vol. 113
|
issue 3
985-988
EN
We investigate the modification of the intrinsic carrier noise spectral density induced in low-doped semiconductor materials by an external correlated noise source added to the driving high-frequency periodic electric field. A Monte Carlo approach is adopted to numerically solve the transport equation by considering all the possible scattering phenomena of the hot electrons in the medium. We show that the noise spectra are strongly affected by the intensity and the correlation time of the external random electric field. Moreover, this random field can cause a suppression of the total noise power.
2
Content available remote

Doping Dependence of Spin Dynamics of Drifting Electrons in GaAs Bulks

100%
Spezia S., Persano Adorno D., Pizzolato N., Spagnolo B.
|
EN
We study the effect of the impurity density on lifetimes and relaxation lengths of electron spins in the presence of a static electric field in an n-type GaAs bulk. The transport of electrons and the spin dynamics are simulated by using a semiclassical Monte Carlo approach, which takes into account the intravalley scattering mechanisms of warm electrons in the semiconductor material. Spin relaxation is considered through the D'yakonov-Perel mechanism, which is the dominant mechanism in III-V semiconductors. The evolution of spin polarization is analyzed by computing lifetimes and depolarization lengths as a function of the doping density in the range 10^{13} ÷ 5 × 10^{16} cm^{-3}, for different values of the amplitude of the static electric field (0.1 ÷ 1.0 kV/cm). We find an increase of the electron spin lifetime as a function of the doping density, more evident for lattice temperatures lower than 150 K. Moreover, at very low intensities of the driving field, the spin depolarization length shows a nonmonotonic behaviour with the density. At the room temperature, spin lifetimes and depolarization lengths are nearly independent on the doping density. The underlying physics is analyzed.
first rewind previous Page / 1 next fast forward last
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.