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EN
Amorphous hydrogenated carbon films were formed on the Si (100) wafers by a direct-ion beam deposition method from pure acetylene and acetylene-hydrogen gas mixtures. The films were irradiated with a nanosecond Nd:YAG laser working at the first harmonics (λ_1=1064 nm), the fourth harmonics (λ_4=266 nm) or with a Nd:YVO_4 laser working at the third harmonic (λ_3=355 nm). The films were studied by the Raman scattering, micro-Fourier transform infrared and Fourier transform infrared spectroscopies, null-ellipsometry, optical and scanning electron microscope, and Vickers hardness method. Irradiation by the wavelength λ_1=1064 nm leads to graphitization and formation of the silicon carbide, because of the silicon substrate decomposition. The samples were strongly modified after the irradiation by λ_3=355 nm - the thickness of the films decreased, and silicon carbide was formed. It was observed that nano-structured materials (e.g. carbon nano-onions, nc-diamond) were formed after the irradiation by λ_4=266 nm.
EN
The aim of this work is to study optical properties of self-organized Si nanohills formed on the SiO_2/Si interface after pulsed Nd:YAG laser irradiation. Nanohills on Si surface give strong photoluminescence in the visible range of spectrum, with a long wing in red portion. This property is explained by charge carrier quantum confinement in nanohills/nanowires.
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