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1
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XPS and Raman Characterizations of Zn_{1-x}Cd_{x}O Films Grown at the Different Growth Conditions

100%
Shtepliuk I., Khyzhun O., Lashkarev G., Khomyak V., Lazorenko V.
Acta Physica Polonica A
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2012
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vol. 122
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issue 6
1034-1038
EN
X-ray photoelectron spectroscopy was employed to characterize the surface chemistry and electronic properties of the Zn_{1-x}Cd_{x}O semiconductor systems obtained at the different growth conditions. The effect of the growth conditions on the core and valence band spectra as well as room-temperature photoluminescence of the Zn_{1-x}Cd_{x}O films was investigated and discussed. Behavior of the X-ray photoelectron spectroscopy peaks indicated an increase of the cadmium and a depletion of the oxygen concentrations upon changing the Ar/O_2 gas ratio and dc power.
2
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Effect of Se Isoelectronic Impurity on the Luminescence Features of the ZnO

100%
Khomyak V., Slyotov M., Shtepliuk I., Slyotov O., Kosolovskiy V.
Acta Physica Polonica A
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2012
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vol. 122
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issue 6
1039-1041
EN
Se-doped ZnO films have been deposited on the sapphire substrates by the radio-frequency magnetron sputtering technique. An influence of the isoelectronic impurity Se on the room-temperature luminescence of the ZnO films is studied. It is revealed that the Se doping leads to an appearance of the intense near-band edge emission spectrum, which consists of three emission bands. The dominant emission band is related to the recombination of the bound excitons. The radiation caused by the band-to-band transitions of free carriers is observed in the high-energy side of the spectrum (ħω > E_{g}).
3
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Fabrication and Characterization of Photosensitive n-CdO/p-InSe Heterojunctions

86%
Kudrynskyi Z., Kovalyuk Z., Katerynchuk V., Khomyak V., Orletsky I., Netyaga V.
Acta Physica Polonica A
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2013
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vol. 124
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issue 4
720-723
EN
Photosensitive n-CdO/p-InSe heterojunctions were developed and studied for the first time. The heterojunctions were fabricated by dc reactive magnetron sputtering of CdO thin films onto the freshly cleaved p-InSe single-crystal substrates (0 0 1). Surface morphology of the obtained films was studied by means of atomic force microscopy. From the X-ray diffraction result it is shown that the CdO film is polycrystalline with cubic structure. The mechanisms of current transport through the space-charge region under forward and back biases were established by investigation of temperature dependences of the I-V characteristics. The main photoelectric parameters and the photosensitivity spectra were measured at room temperature.
4
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Fabrication and Properties of the Photosensitive Anisotype n-Cd_{x}Zn_{1-x}O/p-CdTe Heterojunctions

86%
Khomyak V., Brus V., Ilashchuk M., Orletsky I., Shtepliuk I., Lashkarev G.
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vol. 126
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issue 5
1163-1166
EN
We have fabricated photosensitive anisotype n-Cd_{x}Zn_{1-x}O/p-CdTe heterojunctions by a deposition of Cd_{0.5}Zn_{0.5}O film onto freshly-cleaved CdTe monocrystalline wafers using a radiofrequency magnetron reactive sputtering of a zinc-cadmium alloy target. Fundamental electrical properties of the heterojunctions were studied. Dominant mechanisms of a current transport were found. n-Cd_{x}Zn_{1-x}O/p-CdTe heterojunctions were photosensitive and were able to operate both in photovoltaic and photodiode modes.
5
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Effect of High Energy Electron Irradiation on Structure and Optical Properties of ZnO Films

73%
Myroniuk D., Lashkarev G., Shtepliuk I., Lazorenko V., Maslyuk V., Timofeeva I., Romaniuk A., Strelchuk V., Kolomys O., Khomyak V.
Acta Physica Polonica A
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2013
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vol. 124
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issue 5
891-894
EN
Zinc oxide films were grown on sapphire substrates by direct current magnetron sputtering and irradiated by electrons with energy 10 MeV and fluences 10^{16} and 2 × 10^{16} cm^{-2}. As-grown and irradiated samples were investigated by X-ray diffraction and photoluminescence spectroscopy. It was found that radiation causes the appearance of complex defects, reducing the size of coherent scattering regions and the increase of the defect PL band.
6
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Enhancement of the Ultraviolet Luminescence Intensity from Cd-Doped ZnO Films Caused by Exciton Binding

73%
Shtepliuk I., Lashkarev G., Khyzhun O., Kowalski B., Reszka A., Khomyak V., Lazorenko V., Timofeeva I.
Acta Physica Polonica A
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2011
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vol. 120
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issue 5
914-917
EN
ZnO films doped with the cadmium (0.4-0.6%) were grown on crystalline sapphire c-Al_2O_3 substrates applying radiofrequency magnetron sputtering at the temperature of 400°C in Ar-O_2 atmosphere. The as-grown films were investigated in detail using X-ray diffraction, X-ray photoelectron spectroscopy, and cathodoluminescence spectra. The X-ray diffraction analysis revealed that the films possess a hexagonal wurtzite-type structure with the dominant crystallite orientation along the c axis. It was found that the small concentration of the cadmium significantly enhances the ultraviolet emission associated with excitonic transitions. We suggest that this enhancement effect mainly results from appearance of the cadmium isoelectronic traps, which may bind an exciton, thereby increasing the probability of radiation recombination. The effect of Cd isoelectronic impurity on structural and luminescent properties of ZnO films is discussed.
7
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Effects of Ar/O_2 Gas Ratio on the Properties of the Zn_{0.9}Cd_{0.1}O Films Prepared by DC Reactive Magnetron Sputtering

73%
Shtepliuk I., Lashkarev G., Khomyak V., Marianchuk P., Koreniuk P., Myroniuk D., Lazorenko V., Timofeeva I.
Acta Physica Polonica A
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2011
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vol. 120
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issue 6A
A-61-A-65
EN
Zn_{0.9}Cd_{0.1}O ternary alloys have been grown on the sapphire substrates by using the direct current (dc) magnetron sputtering. X-ray diffraction measurements showed that all samples were highly oriented films along the c-axis perpendicular to the substrate surface. X-ray diffraction confirmed that the crystal quality of Zn_{0.9}Cd_{0.1}O films can be controlled by changing the gas ratio of Ar/O_2. The optical properties of these films have been investigated by means of the optical transmittance and the low-temperature photoluminescence spectra. It was found that the optical band gap of the deposited films can be tuned by growth parameters. The luminescence processes are considered in the terms of alloy fluctuation.
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