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Effect of Secondary Electroluminescence on Cathodoluminescence and Other Luminescence Measurements

100%
Pluska M., Czerwinski A., Szerling A., Ratajczak J., Kątcki J.
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vol. 125
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issue 4
1027-1032
EN
Cathodoluminescence and photoluminescence measurements are commonly accepted as revealing local properties of a specimen region excited by a beam of electrons or photons. However, in the presence of a strong electric field (e.g. a junction) an electron (or light/laser) beam-induced current is generated, which spreads over the structure. A secondary non-local electroluminescence, generated by this current and detected together with the expected luminescence signal, may strongly distort measurement results. This was confirmed by cathodoluminescence measurements on test structures prepared by focused ion beam on AlGaAs/GaAs/InGaAs laser heterostructures. Methods for minimizing the distortion of measured luminescence signals are presented.
2
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Dependence of Nanoelectronic-Structure Defect Detection by Cathodoluminescence on Electron Beam Current

100%
Pluska M., Czerwinski A., Ratajczak J., Szerling A., Kątcki J.
Acta Physica Polonica A
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2009
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vol. 116
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issue S
S-86-S-88
EN
The dependence of defect detection by cathodoluminescence in a scanning electron microscope on the electron beam current is considered. The examined specimens are AlGaAs/GaAs laser heterostructures with InGaAs quantum well. It is shown that for low electron beam currents, which are typically used, the uniform cathodoluminescence is observed, while for the increasing high electron beam current the oval defects become more and more visible. The influence of electrical properties of the structure on the luminescence detection is explained.
3
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Visible Light Emission from Porous Silicon

100%
Bugajski M., Wesołowski M., Lewandowski W., Ornoch J., Kątcki J.
Acta Physica Polonica A
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1992
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vol. 82
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issue 5
914-918
EN
The aim of this paper is the study of porous Si prepared by preferential anodic dissolution in concentrated HF acid solutions. Porous silicon layers exhibited extremely efficient luminescence in the 700-900 nm range at room temperature. Basic characteristics of this luminescence strongly suggest the intrinsic origin of the process, directly related to quantum confinement. The additional transmission-electron-microscopy and electron-diffraction studies - were performed to support hypothesis that luminescence originates from silicon nanostructures.
4
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Resonant Cavity Enhanced Photonic Devices

100%
Bugajski M., Muszalski J., Ochalski T., Kątcki J., Mroziewicz B.
Acta Physica Polonica A
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2002
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vol. 101
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issue 1
105-118
EN
In the present paper we review our recent works on technology, basic physics, and applications of one-dimensional photonic structures. We demonstrate spontaneous emission control in In_xGa_{1-x}As/GaAs planar microcavities with distributed Bragg reflectors. In general, observed trends are in agreement with theoretical predictions. We also demonstrate the operation of resonant-cavity light emitting diodes and optically pumped vertical cavity light emitting diodes developed recently at the Department of Physics and Technology of Low-Dimensional Structures of the Institute of Electron Technology.
5
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Oxygen Precipitation in Si:O Annealed under High Hydrostatic Pressure

86%
Misiuk A., Bąk-Misiuk J., Bryja L., Kątcki J., Ratajczak J., Jun J., Surma B.
Acta Physica Polonica A
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2002
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vol. 101
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issue 5
719-727
EN
Effect of hydrostatic pressure up to 1.2 GPa on oxygen-implanted silicon, Si:O (O^+ dose, D, within the 6×10^{17}-2×10^{18} cm^{-2} range), treated at 1230-1570 K, was investigated by X-ray, transmission electron microscopy and photoluminescence methods. The pressure treatment affects oxygen precipitation and defect creation, especially in low oxygen dose implanted Si:O (D=6×10^{17} cm^{-2}). Such investigation helps in understanding the stress related phenomena in Si wafers with buried insulating layer.
6
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TEM Characterization of Polysilicon and Silicide Fin Fabrication Processes of FinFETs

73%
Ratajczak J., Łaszcz A., Czerwinski A., Kątcki J., Tang X., Reckinger N., Yarekha D., Larrieu G., Dubois E.
Acta Physica Polonica A
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2009
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vol. 116
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issue S
S-89-S-91
EN
The transmission electron microscopy characterization of various silicon and silicide fin structures intended for application in FinFET devices has been performed. The results showed that transmission electron microscopy is a very useful tool for optimization of manufacturing processes of fin nanostructures in FinFETs.
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