Search results

Sort By:

Limit search:

DLTS Investigations of (Ga,In)(N,As)/GaAs Quantum Wells before and after Rapid Thermal Annealing

100%

Gelczuk Ł., Dąbrowska-Szata M., Pucicki D.

Acta Physica Polonica A

2014

vol. 126

issue 5

1195-1198

Deep level transient spectroscopy was used to investigate deep-level defects in (Ga,In)(N,As)/GaAs triple quantum well structures grown by atmospheric pressure metalorganic vapor phase epitaxy with different indium and nitrogen contents and annealed in rapid thermal annealing system. A combination of electron traps that disappear or remain on annealing and a new hole trap that appears on annealing were detected. The revealed electron traps were attributed to N-related complexes or GaAs host-related native point defects. Moreover, it was suggested that the new hole trap observed in the annealed GaAsN/GaAs triple quantum well structure together with the dominant electron trap can act as generation-recombination center responsible for the observed a very poor optical quality among all the investigated multi-quantum well structures.

Advanced technology of AIII-BV and AIII-N structures for microelectronics application

64%

Boratyński B., Korbutowicz R., Paszkiewicz B., Paszkiewicz R., Pucicki D., Radziewicz D., Ściana B., Tłaczała M.

Bulletin of the Polish Academy of Sciences: Technical Sciences

2004

vol. 52

issue 4

Refine search results

1 Acta Physica Polonica A

1 Bulletin of the Polish Academy of Sciences: Technical Sciences

1 2014

1 2004

2 Pucicki D.

1 Boratyński B.

1 Dąbrowska-Szata M.

1 Gelczuk Ł.

1 Korbutowicz R.

1 Paszkiewicz B.

1 Paszkiewicz R.

1 Radziewicz D.

1 Tłaczała M.

1 Ściana B.

Search results

DLTS Investigations of (Ga,In)(N,As)/GaAs Quantum Wells before and after Rapid Thermal Annealing

Advanced technology of AIII-BV and AIII-N structures for microelectronics application