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Control of Ferromagnetism in Cd_{1-x}Mn_xTe Based Quantum Wells

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Bertolini M., Boukari H., Ferrand D., Cibert J., Tatarenko S., Gilles B., Maślana W., Gaj J., Kossacki P., Dietl T.
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issue 4-5
603-608
EN
New structures aiming at controlling the ferromagnetic properties of diluted magnetic semiconductor quantum wells are presented. The carrier density is controlled by applying a voltage across a p-i-n diode. A new method, creating a 2D hole gas by adjusting the distance between the quantum well and surface, offers opportunities for a broader range of structures.
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