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Characteristics of Thermally Stimulated Luminescence and Conductivity of Insulating Crystal

100%
Opanowicz A.
Acta Physica Polonica A
|
1996
|
vol. 89
|
issue 5-6
635-648
EN
Different characteristics of thermally stimulated luminescence and conductivity in insulator are numerically calculated without the quasi-equilibrium approximation. The results are compared with corresponding results calculated using the quasi-equilibrium approximation. This comparison suggests that the quasi-equilibrium approximation is correct in the low temperature range of the thermally stimulated luminescence and conductivity curves for crystals which have the density of recombination centres higher than 10^{13} cm^{-3} and the recombination coefficient larger than 10^{-12} cm^{3} s^{-1}, or equivalently, for those with the initial free electron lifetime shorter than 10^{-1} s. For the high temperature range of the thermally stimulated luminescence and conductivity curves the quasi-equilibrium approximation gives correct results if the recombination centres density is higher than 10^{14} cm^{-3} and the recombination coefficient is larger than 10^{-12} cm^{3} s^{-1} or if the initial free electron lifetime is shorter than 10^{-2} s. The results of this paper show also that the so-called "first-order" shape of the thermally stimulated luminescence and conductivity curves is typical not of the weak retrapping only, but it can be obtained also for the strong retrapping.
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Photo-Effects in In/p-CuInSe_{2} Schottky-Type Junction

63%
Opanowicz A., Kościelniak-Mucha B.
Acta Physica Polonica A
|
1991
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vol. 79
|
issue 2-3
411-414
EN
The voltage-dependent photocurrent and the short-circuit photocurrent generated by the modulated light in the In/p-CuInSe_{2} junction were measured. The results suggest that the recombination of carriers occurs in the metal-semiconductor interface as well as in the recombination centres present in the space charge region of the junction. Both the interface recombination and the recombination in the centres can be modified by illumination of the junction.
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