Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl
Preferences help
enabled [disable] Abstract
Number of results

Results found: 3

Number of results on page
first rewind previous Page / 1 next fast forward last

Search results

help Sort By:

help Limit search:
first rewind previous Page / 1 next fast forward last
EN
The results of investigation of the polycrystalline boron implanted by magnesium and argon plasma pulse treatment are presented. The four-probe electric conductivity measurements and magnetically modulated microwave absorption showed the presence of superconducting islands below the temperature of 25 K. Below T=23 K we detected the Kondo effect, a logarithmic increase in the resistivity as the temperature is lowered, due to iron impurity.
EN
The results of investigation of the MgB_2 layers prepared on silicon substrate by implantation of Mg ions into boron substrate are presented. After implantation the annealing processes were carried out at temperatures 673 K, 773 K, and 873 K in a furnace in an atmosphere of flowing Ar-4%H_2 gas mixture. The samples were characterized by: four-probe electric conductivity measurements and magnetically modulated microwave absorption. Our results showed that due to silicon substrate the diffusion of implanted Mg ions into boron materials should be limited, and the superconducting phase forms a continuous MgB_2 layer and the resistivity for all samples fall down to zero below T_{c}. The transition temperature T_{c} becomes higher with increasing annealing temperature: T_{c}=18 K (for annealing at T_{A}=673 K), T_{c}=20 K (for annealing at T_{A}=773 K), and T_{c}=27 K (for annealing at T_{A}=873 K).
first rewind previous Page / 1 next fast forward last
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.