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EN
The analysis of an interaction of bound excitons with lattice vibrations for ZnO:Ni and ZnO:Cu is given on the basis of symmetry consideration.
EN
Experimental studies of X-ray photoelectron and Co L_α X-ray emission spectra of the ZnS:Co semiconductor were carried out. It was established that Co ions are in a Co^{2+} configuration and that the Co 3d impurity states are localized above the top of the valence band by 1.0±0.2 eV.
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Fe^{2+} → Fe^{3+} Ionization Transition in ZnSe

81%
EN
Detailed photo-ESR study of iron and chromium impurities in ZnSe is presented. The energy level position of Fe 2+/3+ energy level is determined. The role of iron and chromium impurities in nonradiative recombination processes is discussed.
4
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Excitonic Spectra of Cd_{1-x}Fe_{x}Te Crystals

81%
EN
Strong modification of the optical spectra near the band-gap edge is observed in Cd_{1-x}Fe_{x}Te crystals as compared to the spectra of a pure compound. The evolution of the luminescence spectra at the increase in Fe concentration is represented by the change of radiative recombination channels from dominantly (A^{0}, x) acceptor bound exciton emission in undoped CdTe to the free exciton luminescence in Cd_{1-x}Fe_{x}Te solid solutions.
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81%
EN
Absorption and reflectivity measurements were carried out on Zn_{1-x}Mn_{x}Se:Ni solid solutions. The spectra demonstrate the radical change of the structure of internal Ni^{2+}(3d^{8}) transitions at the presence of the Mn ions and strong dependence on Mn concentration. The threshold energy ħω_{th} for the process of Ni photoionization to the valence band Ni^{2+}(3d^{8}) + ħω_{th} → Ni^{1+}(3d^{9}) + h is shifted to the lower energy by 30 meV, but hardly depends on x despite the essential increase in the energy gap.
6
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Photo-ESR Studies of Ni doped ZnS and ZnSe

81%
EN
The results of electron spin resonance experiments are presented for nickel doped ZnS and ZnSe. Energy level position of Ni^{1+} state in band gap of ZnS and ZnSe is determined. The nonradiative recombination processes of donor-acceptor pairs in Ni doped samples are discussed.
EN
Absorption and reflectivity measurements have been carried out for Zn_{1-x}Cd_{x}Se:Ni and ZnS_{x}Se_{1-x}:Ni solid solutions. Energy level positions of nickel 2+/1+ charge state have been used for estimation of band offsets for the valence and conduction bands of ZnCdSe/ZnSe and ZnSSe/ZnSe. Intra-shell transitions of Ni^{2+} were also studied.
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61%
EN
The electron spin resonance of Co^{2+} ions in ZnS_{x}Se_{1-x}:Co mixed crystals was measured at temperature of 3 K and microwave frequency of 9.47 GHz. Trigonal Co_{Zn}^{2+}-S center in the ZnS_{0.001}Se_{0.999}:Co crystal was identified and parameters of relevant spin Hamiltonian were determined. Influence of alloy disorder in the anion sublattice on the Co_{Zn}^{2+} ground and first excited states is briefly discussed.
9
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Photoluminescence of Co-Doped ZnCdSe and ZnSSe Alloys

52%
EN
Photoluminescence measurements have been carried out for Zn_{1-x} Cd_{x} Se:Co and ZnS_{x}Se_{1-x}:Co mixed crystals. Changes of recombination channels are observed in mixed crystals as compared to the emission of host binary compounds. Character of changes is slightly different for the alloys with cation and anion substitution. Photoluminescence kinetics of the L-line and of two other Co^{2+} intra-shell emission bands was measured to determine radiative decay rates.
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