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Poly(ethylene glycol dimethacrylate-co-1-vinyl-1,2,4-triazole/ carbon nanotube, single-walled)/n-GaAs Diode Formed by Surface Polymerization

100%
Ahmetoglu M., Kara A., Kucur B.
Acta Physica Polonica A
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2016
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vol. 130
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issue 1
206-208
EN
Poly(ethylene glycol dimethacrylate-co-1-vinyl-1,2,4-triazole/carbon nanotube, single-walled)/n-GaAs ([P(EGDMA-VTAZ)-CNSW]/n-GaAs) diode was fabricated by using surface polymerization method. Electrical properties were carried out at several temperatures. Dark current mechanisms were investigated by using current-voltage (I-V) measurements. It was shown that the fabricated structure exhibited rectification behaviour that makes it a good candidate for electronic device applications.
2
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Electrical and Optical Characteristics of n-GaSb/n-GaIn_{0.24}AsSb/p-GaAl_{0.34}AsSb Heterostructure Photodiode

76%
Ahmetoglu M., Kucur B., Andreev I., Kunitsyna E., Mikhailova M., Yakovlev Y.
Acta Physica Polonica A
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2015
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vol. 127
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issue 4
1007-1009
EN
In the present paper, electrical and optical properties of n-GaSb/n-GaIn_{0.24}AsSb/p-GaAl_{0.34}AsSb double heterostructure (DH) with a diameter of 0.3 mm are reported. The current-voltage (I-V) characteristics of the structure were investigated at several temperatures in both, dark and under the illumination conditions. The effect of illumination was studied at different intensity values. Short circuit current and open circuit voltage as a function of intensity of incident light in photovoltaic mode are investigated.
3
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Electrical Properties of GaInAsSb/GaSb/GaAlAsSb Double Heterostructure with Low Diameter

76%
Kucur B., Ahmetoglu M., Andreev I., Kunitsyna E., Mikhailova M., Yakovlev Y.
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vol. 125
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issue 2
411-413
EN
GaInAsSb/GaSb/GaAlAsSb double heterostructures are attractive for optoelectronic devices working in the 1.5-4.8 μm wavelength region. In this paper, the current mechanisms of liquid phase epitaxy grown GaInAsSb based double heterostructures with 100 μm diameter were investigated in the temperature range 77-350 K. It was found that diffusion current dominates at the high temperature (> 240 K) and small forward bias region, while generation-recombination current dominates at intermediate temperatures (242-171 K). At low temperature region (< 171 K), the tunneling mechanism of the current flow dominates in both forward and reverse biases.
4
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Electrical Characteristics and Temperature Dependence of Photovoltaic Parameters of GaInAsSb Based TPV Diode

76%
Kucur B., Ahmetoglu M., Andreev I., Kunitsyna E., Mikhailova M., Yakovlev Y.
Acta Physica Polonica A
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2016
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vol. 129
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issue 4
767-769
EN
In this paper, electrical characterization of low bandgap GaInAsSb based thermophotovoltaic (TPV) diodes were investigated, as well as the temperature dependence of photovoltaic parameters such as short circuit current (I_{sc}) and open circuit voltage (V_{oc}). Investigation of the dark current mechanisms of the structure was carried out at several temperatures. The effect of light intensity on current-voltage characteristics was also investigated.
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