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1

Changes of tribological properties of Inconel 600 after ion implantation process

100%

Barlak M., Chmielewski M., Pietrzak K., Werner Z.

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2014

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issue 4

2

Channeling Study of Co and Mn Implanted and Thermally Annealed Wide Band-Gap Semiconducting Compounds

76%

Ratajczak R., Werner Z., Barlak M., Pochrybniak C., Stonert A., Zhao Q.

Acta Physica Polonica A

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2015

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vol. 128

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issue 5

845-848

EN

The defect build-up, structure recovery and lattice location of transition metals in ion bombarded and thermally annealed ZnO and GaN single crystals were studied by channeled Rutherford backscattering spectrometry and channeled particle-induced X-ray emission measurements using 1.57 MeV ⁴He ions. Ion implantation to a fluence of 1.2×10¹⁶ ions/cm² was performed using 120 keV Co and 120 keV Mn ions. Thermal annealing was performed at 800°C in argon flow. Damage distributions were determined using the Monte Carlo McChasy simulation code. The simulations of channeled Rutherford backscattering spectra reveal that the ion implantation leads to formation of two types of defect structures in ZnO and GaN such as point and extended defects, such as dislocations. The concentrations of both types of defects are at a comparable level in both structures and for both implanted ions. Differences between both implantations appear after thermal annealing where the Mn-doped ZnO reveals much better transition metals substitution and recovery effect.

3

Enrichment of AISI 316L Steel Surface Layer with Rare Earth Elements Using Ion Beams

76%

Sartowska B., Waliś L., Starosta W., Barlak M., Pochrybniak C., Kowalska E.

Acta Physica Polonica A

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2013

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vol. 123

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issue 5

822-824

EN

Enrichment of AISI 316L steel surface layers with rare earth elements was carried out using two methods with ion beam applying. The first one was the ion implantation with the doses in the range of 1 × 10^{15} cm^{-2} up to 5 × 10^{17} cm^{-2} where mishmetal (Ce+La) was used as the ion source. The second method was the high intensity pulsed plasma beams. The plasma pulses contained both ions/atoms of Ce+La from the electrodes material (mishmetal). The pulse energy densities (3 J/cm^2) were sufficient to melt the near surface layer of the steel and introduce those elements into the surface layer. The aim of this work was to investigate the changes of stainless steel surface properties (morphology, rare earth elements concentration, presence of identified phases) after the rare earth elements addition with or without melting. Scanning electron microscopy, energy dispersion spectroscopy, and X-ray diffraction analysis were used for initial and modified surface characterisation. Grazing-incidence X-ray diffraction shows differences in the identified phase presence in the modified surface layer connected with the modification method.

4

Structure and Composition of Scales Formed on AISI 316 L Steel Alloyed with Ce/La Using High Intensity Plasma Pulses after Oxidation in 1000°C

76%

Sartowska B., Piekoszewski J., Waliś L., Barlak M., Starosta W., Pochrybniak C., Bocheńska K.

Acta Physica Polonica A

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2011

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vol. 120

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issue 1

83-86

EN

It is well documented that the high oxygen affinity elements such as Y, Ce, La, Er and other rare earth elements added to steel in small amounts can improve their high temperature oxidation resistance. Rare earth elements can be either alloyed during the steel making process or introduced through surface treatment techniques. Improvement of high temperature oxidation resistance of AISI 316 L steel by incorporation Ce and La elements into its near surface region using high intensity pulsed plasma beams in so-called deposition by the pulse erosion mode was investigated in the present work. The samples were irradiated with 3 short (μs scale) intense (energy density 3 J/cm^2) plasma pulses. Heating and cooling processes occur under non-equilibrium conditions. In all samples the near surface layer of the thickness in μm range was melted and simultaneously doped with cerium and lanthanum. The modified samples were oxidized at 1000°C for 100 h in air. The obtained effects were: oxide scales formed on the treated samples were more fine-grained, compact and adhering better that those formed on the un-treated samples.

5

Tribological Properties of AISI 316L Steel Surface Layer Implanted with Rare Earth Element

76%

Sartowska B., Barlak M., Waliś L., Starosta W., Senatorski J., Kosińska A.

Acta Physica Polonica A

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2015

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vol. 128

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issue 5

923-926

EN

Stainless steels with their very good corrosion resistance are used in nuclear, petrochemical, chemical, pulp and paper chemical industries as well as in food processing and others. Unfortunately, poor tribological properties of this kind of steel can be the limitation in the situations in which wear can be responsible for material degradation, like corrosion-erosion. Improvement of the wear resistance of austenitic stainless steels can be achieved using different methods of surface modification, for example: enrichment of the surface layer with reactive elements. Rare earth elements were implanted to AISI 316L austenitic stainless steel using the MEVVA type implanter (65 kV). Different rare earth elements implanted doses: 10¹⁵, 5×10¹⁵, and 5×10¹⁶ ion/cm² were applied. Initial and modified surfaces were investigated using scanning electron microscopy, elemental analysis with the energy dispersive spectroscopy method, X-ray diffraction analysis and the Rutherford backscattered spectroscopy. Tribological properties were investigated using the Amsler method. The most important result was that the surface layers of AISI 316L steel implanted with rare earth elements showed improvement of tribological properties as compared with the initial material.

6

Superconducting Regions and Kondo Effect of MgB_2 Formed by Implantation of Magnesium Ions into Boron Substrate

64%

Trybuła Z., Kempiński W., Andrzejewski B., Piekara-Sady L., Kaszyński J., Trybuła M., Piekoszewski J., Stanisławski J., Barlak M., Richter E.

Acta Physica Polonica A

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2006

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vol. 109

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issue 4-5

657-660

EN

The results of investigation of the polycrystalline boron implanted by magnesium and argon plasma pulse treatment are presented. The four-probe electric conductivity measurements and magnetically modulated microwave absorption showed the presence of superconducting islands below the temperature of 25 K. Below T=23 K we detected the Kondo effect, a logarithmic increase in the resistivity as the temperature is lowered, due to iron impurity.

7

Superconductivity of MgB_2 Layers Prepared on Silicon Substrate by Implantation of Magnesium Ions into Boron Substrate

64%

Trybuła Z., Kempiński W., Łoś S., Kaszyńska K., Trybuła M., Piekoszewski J., Werner Z., Barlak M.

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issue 2

323-325

EN

The results of investigation of the MgB_2 layers prepared on silicon substrate by implantation of Mg ions into boron substrate are presented. After implantation the annealing processes were carried out at temperatures 673 K, 773 K, and 873 K in a furnace in an atmosphere of flowing Ar-4%H_2 gas mixture. The samples were characterized by: four-probe electric conductivity measurements and magnetically modulated microwave absorption. Our results showed that due to silicon substrate the diffusion of implanted Mg ions into boron materials should be limited, and the superconducting phase forms a continuous MgB_2 layer and the resistivity for all samples fall down to zero below T_{c}. The transition temperature T_{c} becomes higher with increasing annealing temperature: T_{c}=18 K (for annealing at T_{A}=673 K), T_{c}=20 K (for annealing at T_{A}=773 K), and T_{c}=27 K (for annealing at T_{A}=873 K).

8

The Evolution of Superconducting Phase MgB_x

64%

Łoś S., Kempiński W., Piekara-Sady L., Andrzejewski B., Jurga W., Kaszyńska K., Piekoszewski J., Werner Z., Barlak M.

Acta Physica Polonica A

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2008

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vol. 114

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issue 1

179-184

EN

Thin layers of MgB_x were studied in order to define evolution of superconducting phase after Mg ions implantation into boron substrate. Three fluencies of energies 140, 80, and 40 keV were used to establish proper stoichiometry to synthesize homogeneous MgB_2 film. Additionally, the annealing processes were carried out at temperatures 400, 500, and 600°C in a furnace in an atmosphere of flowing Ar-4%H_2 gas mixture. The quality of the superconducting material was examined by magnetically modulated microwave absorption, and magnetic and resistivity measurements. The results showed that T_c becomes higher with increasing annealing temperature. However, the fraction of superconducting phase decreases, due to partial evaporation of Mg ions and their deeper migration into boron substrate.

9

Formation of Superconducting Regions of MgB_2 by Implantation of Boron Ions into Magnesium Substrate

52%

Trybuła Z., Kempiński W., Andrzejewski B., Piekara-Sady L., Kaszyński J., Piekoszewski J., Werner Z., Richter E., Prokert F., Stanisławski J., Barlak M.

Acta Physica Polonica A

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2005

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vol. 108

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issue 1

165-170

EN

The results of investigation of the MgB_2 inter-metallic compound with the use of boron ions implantation and plasma pulse treatment are presented. The samples were characterized by: four-probe electric conductivity measurements, magnetically modulated microwave absorption, and magnetic measurements. For hydrogen and argon pulsed plasma treatment the samples with T_c ranging from 10 K to 32 K were obtained. The superconducting phase does not form a continuous layer since the resistivity does not fall down to zero. Apparently, separate islands of superconducting phase are connected through metallic Mg paths. All samples are still below the percolation threshold.

Refine search results

Changes of tribological properties of Inconel 600 after ion implantation process

Channeling Study of Co and Mn Implanted and Thermally Annealed Wide Band-Gap Semiconducting Compounds

Enrichment of AISI 316L Steel Surface Layer with Rare Earth Elements Using Ion Beams

Structure and Composition of Scales Formed on AISI 316 L Steel Alloyed with Ce/La Using High Intensity Plasma Pulses after Oxidation in 1000°C

Tribological Properties of AISI 316L Steel Surface Layer Implanted with Rare Earth Element

Superconducting Regions and Kondo Effect of MgB_2 Formed by Implantation of Magnesium Ions into Boron Substrate

Superconductivity of MgB_2 Layers Prepared on Silicon Substrate by Implantation of Magnesium Ions into Boron Substrate

The Evolution of Superconducting Phase MgB_x

Formation of Superconducting Regions of MgB_2 by Implantation of Boron Ions into Magnesium Substrate