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Crack Free GaInN/AlInN Multiple Quantum Wells Grown on GaN with Strong Intersubband Absorption at 1.55μm

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Cywiński G., Skierbiszewski C., Feduniewicz-Żmuda A., Siekacz M., Nevou L., Doyennette L., Julien F., Prystawko P., Kryśko M., Grzanka S., Grzegory I., Porowski S.

Acta Physica Polonica A

2006

vol. 110

issue 2

175-181

Crack free GaInN/AlInN multiple quantum wells were grown by rf plasma-assisted molecular beam epitaxy on (0001) GaN/sapphire substrates. The strain-engineering concept was applied to eliminate cracking effect for growth of intersubband structures on GaN. Indium contained ternary compounds of barrier and well layers are contrary strained to the substrate material. A series of crack free GaInN/AlInN intersubband structures on (0001) GaN was fabricated and investigated. The assumed composition and layered structure were confirmed by room temperature photoluminescence and X-ray diffraction measurements. The intersubband measurements were done in multipass waveguide geometry by applying direct intersubband absorption and photoinduced intersubband absorption measurements. The optimized structure design contains forty periods of Si-doped GaInN/AlInN quantum wells and exhibits strong intersubband absorption.

III-Nitride Nanostructures for Infrared Optoelectronics

100%

Monroy E., Guillot F., Leconte S., Bellet-Amalric E., Nevou L., Doyennette L., Tchernycheva M., Julien F., Baumann E., Giorgetta F., Hofstetter D., Dang L.

Acta Physica Polonica A

2006

vol. 110

issue 3

295-301

Thanks to their large conduction band offset (~1.8 eV for the GaN/AlN system) and subpicosecond intersubband scattering rates, III-nitride heterostructures in the form of quantum wells or quantum dots are excellent candidates for high-speed unipolar devices operating at optical-fiber telecommunication wavelengths, and relying on the quantum confinement of electrons. In this work, we present the plasma-assisted molecular-beam epitaxial growth of quantum well infrared photodetector structures. The growth of Si-doped GaN/AlN multiple quantum well structures is optimized by controlling substrate temperature, metal excess and growth interruptions. Structural characterization confirms a reduction of the interface roughness to the monolayer scale. P-polarized intersubband absorption peaks covering the 1.33-1.91μm wavelength range are measured on samples with quantum well thickness varying from 1 to 2.5 nm. Complete intersubband photodetectors have been grown on conductive AlGaN claddings, the Al mole fraction of the cladding matching the average Al content of the active region. Photovoltage measurements reveal a narrow (~90 meV) detection peak at 1.39μm at room temperature.

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2 Acta Physica Polonica A

2 2006

2 Doyennette L.

2 Julien F.

2 Nevou L.

1 Baumann E.

1 Bellet-Amalric E.

1 Cywiński G.

1 Dang L.

1 Feduniewicz-Żmuda A.

1 Giorgetta F.

1 Grzanka S.

1 Grzegory I.

1 Guillot F.

1 Hofstetter D.

1 Kryśko M.

1 Leconte S.

1 Monroy E.

1 Porowski S.

1 Prystawko P.

1 Siekacz M.

1 Skierbiszewski C.

1 Tchernycheva M.

Search results

Crack Free GaInN/AlInN Multiple Quantum Wells Grown on GaN with Strong Intersubband Absorption at 1.55μm

III-Nitride Nanostructures for Infrared Optoelectronics