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Origin of Point Defects in β-Ga₂O₃ Single Crystals Doped with Mg²⁺ Ions

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Luchechko A., Vasyltsiv V., Kostyk L., Tsvetkova O.
Acta Physica Polonica A
|
2018
|
vol. 133
|
issue 4
811-815
EN
Optical absorption and photoconductivity investigations of nominal pure and Mg²⁺ doped β-Ga₂O₃ single crystals have been carried out. Additional bands in the UV (3.6-4.6 eV) and near-IR (0.4-1.2 eV) spectral regions were found in optical absorption and photoconductivity spectra. A correlation between Mg²⁺ doping, annealing in oxygen atmosphere as well as optical absorption and photoconductivity bands were established in gallium oxide. Electronic transitions from shallow traps and F-centers were observed in the IR spectral region (0.4-1.2 eV). Absorption and photoconductivity in the UV region are related to deep acceptor levels created by native defects and impurities.
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