Search results

1

Evolutionary methods to analogue electronic circuits yield optimisation

100%

Jantos P., Rutkowski J.

|

2008

|

vol. 56

|

issue 1

2

Pressure Influence on the Curie Temperature

81%

Rutkowski J., Wojtczak L., Zajac Š.

|

issue 5

745-746

EN

The pressure dependence of the ferromagnetic-paramagnetic phase transition temperature T_{C} (p) is of high interest due to its direct technological implications. The theoretical investigations of the Curie temperature T_{C} (p) considered in the ferromagnetic crystals have been studied employing various methods of calculations. The present paper is devoted to its description by means of the pseudoharmonic approximation approach.

3

Finding of optimal excitation signal for testing of analog electronic circuits

81%

Chruszczyk Ł., Grzechca D., Rutkowski J.

|

2007

|

vol. 55

|

issue 3

4

Heuristic methods to test frequencies optimization for analogue circuit diagnosis

81%

Jantos P., Grzechca D., Golonek T., Rutkowski J.

|

2008

|

vol. 56

|

issue 1

5

Calculations of Dark Current in Interband Cascade Type-II Infrared InAs/GaSb Superlattice Detector

81%

Hackiewicz K., Martyniuk P., Rutkowski J., Kowalewski A.

Acta Physica Polonica A

|

2017

|

vol. 132

|

issue 4

1415-1419

EN

In this paper we investigate interband cascade type-II mid-wavelength infrared InAs/GaSb superlattice detector in temperature range from 200 K to 300 K. The paper is based on the theoretical calculation of dark current treated as a sum of two components: average bulk current and average leakage current, flowing through the device. The average leakage current results from a comparison of theoretically calculated bulk current and measured one. We show that it is possible to fit theoretical model to experimental data, assuming that transport in absorber is determined by the dynamics of the intrinsic carriers. Based on the fit we estimated carrier lifetime greater than 100 ns in temperature range 200-300 K.

6

Evolutionary algorithms for global parametric fault diagnosis in analogue integrated circuits

81%

Jantos P., Rutkowski J., Grzechca D.

|

2012

|

issue 1

7

Surface smoothness improvement of HgCdTe layers grown by MOCVD

62%

Gawron W., Madejczyk P., Kłos K., Rutkowski J., Piotrowski A., Rogalski A., Mróz W.

|

2009

|

vol. 57

|

issue 2

8

Influence of TDMAAs Acceptor Precursor on Performance Improvement of HgCdTe Photodiodes

62%

Madejczyk P., Gawron W., Piotrowski A., Kłos K., Rutkowski J., Rogalski A.

|

issue 6

1199-1204

EN

One of the key factor which determine HgCdTe photodiode quality is acceptor doping efficiency. This paper presents significant progress made over the past three years in development of acceptor doping technology in metalorganic chemical vapour deposition HgCdTe photovoltaic detectors. High acceptor doping is required for P^{+}-contact layers, whereas low doping is necessary for p-type absorbing base layer. Previously, AsH_3 precursor was used as an acceptor dopant. This precursor is partially incorporated as electrically neutral As-H pairs, which are likely to be recombination centres in HgCdTe and in consequence influence on the carriers lifetime lowering. Substituting of AsH_3 by TDMAAs resulted in higher carrier lifetimes and thereby about one order of magnitude higher R_0A product of HgCdTe photodiodes in temperatures close to 230 K.

9

Mid-wave InAs/GaSb superlattice barrier infrared detectors with nBnN and pBnN design

52%

Gomółka E., Rutkowski J., Martyniuk P., Markowska O., Kopytko M., Kowalewski A., Rogalski A., Motyka M., Krishna S.

|

2018

|

issue 3

Refine search results

Evolutionary methods to analogue electronic circuits yield optimisation

Pressure Influence on the Curie Temperature

Finding of optimal excitation signal for testing of analog electronic circuits

Heuristic methods to test frequencies optimization for analogue circuit diagnosis

Calculations of Dark Current in Interband Cascade Type-II Infrared InAs/GaSb Superlattice Detector

Evolutionary algorithms for global parametric fault diagnosis in analogue integrated circuits

Surface smoothness improvement of HgCdTe layers grown by MOCVD

Influence of TDMAAs Acceptor Precursor on Performance Improvement of HgCdTe Photodiodes

Mid-wave InAs/GaSb superlattice barrier infrared detectors with nBnN and pBnN design