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Amorphous Hydrogenated Silicon Films Studied by Schottky Barrier Method

100%
Kołodziej A., Pisarkiewicz T.
Acta Physica Polonica A
|
1991
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vol. 79
|
issue 2-3
229-234
EN
The problem of the effective ohmic junction and the question of the barrier height for thin film structures of Al/a-Si:H/n^{+}c-Si/Al and Al/a-Si:H/n^{+}c-Si/Mo are studied. Current-voltage and temperature characteristics were measured and possible mechanisms of conductivity were extracted and discussed.
2
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Electrical Properties of Hydrogenated Amorphous Si_{1-x}Ge_{x} Thin Films

81%
Pisarkiewicz T., Stapiński T., Kołodziej A.
Acta Physica Polonica A
|
1991
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vol. 79
|
issue 2-3
203-206
EN
Thin films of hydrogenated amorphous Si-Ge alloys were obtained by r.f. sputtering in Ar + H_{2} gas atmosphere using composite targets of Si and Ge. Dark conductivity and photoconductivity were measured in the temperature range of 300-500 K for films with x varying from 0.11 to 0.63. Both dark conductivity and photoconductivity exibit activation type dependences in the temperature range studied. Heterogeneity two-phase model and a model based on Fermi level shift with temperature were invoked to discuss the conduction mechanism.
3
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Solution growth of ZnO sub-micro rods enhanced by electric field

81%
Pisarkiewicz T., Kenig T., Rydosz A., Maziarz W.
|
2011
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issue 4
4
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Density of Gap States Deconvoluted from Photoconductive Spectra for Undoped Amorphous Silicon and Silicon-Carbon Thin Films

71%
Pisarkiewicz T., Stapiński T., Adriaenssens G., Lauwerens W., Rava P.
Acta Physica Polonica A
|
1995
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vol. 87
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issue 2
407-410
EN
Density of states in amorphous hydrogenated silicon and silicon-carbon thin films were calculated by deconvolution of the optical absorption coeffi­cient a! measured by constant photocurrent method. Addition of carbon to silicon lattice increases the optical band-gap and influences the distribution of defect states in the gap.
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