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1
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3D Laser Microscopy for Nanotechnology and Metrology

100%
Yatsunenko S., Fabich M.
Acta Physica Polonica A
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2009
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vol. 116
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issue S
S-194-S-195
2
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Effect of Annealing on the Crystal Structure and Microstructure of Pr Doped ZrO_{2}-Y_{2}O_{3} Nanocrystals

71%
Werner-Malento E., Paszkowicz W., Fidelus J., Godlewski M., Yatsunenko S.
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issue 1
91-97
EN
Rare-earth doped nanocrystalline yttria-stabilized zirconia (YSZ, ZrO_{2}-Y_{2}O_{3}) is, recently, a subject of studies because of its luminescent properties. The luminescence may be strongly influenced by the crystal structure and microstructure of the material. In this work, the X-ray diffraction study for Pr doped YSZ nanocrystals is presented. The phase composition dependence on the Y_{2}O_{3} content and on heat treatment conditions is quantitatively determined using the Rietveld method and the similarities and differences between the present data for doped samples and earlier reported data for undoped material are discussed. A formation of high symmetry phases (cubic and tetragonal) is observed for high yttria content in agreement with general tendencies observed in literature for undoped samples.
3
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Photoluminescence and Chromaticity Properties of ZnO Nanopowders Made by a Microwave Hydrothermal Method

62%
Wolska E., Sibera D., Witkowski B., Yatsunenko S., Pełech I., Narkiewicz U., Godlewski M.
Acta Physica Polonica A
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2011
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vol. 120
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issue 5
908-910
EN
Four series of ZnO nanopowders obtained by a microwave hydrothermal method are examined. Two different solvents (ethanol and distilled water) and different values of pressure during heating in the reactor were used. The obtained nanopowders show a bright emission covering visible light spectral region, including the band edge emission. Results of scanning electron microscopy, X-ray diffraction, photo- and cathodoluminescence investigations and also CIE1961 chromaticity diagram are presented.
4
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Growth and Characterization of ZnO Nanoparticles

62%
Tomaszewska-Grzęda A., Łojkowski W., Godlewski M., Yatsunenko S., Drozdowicz-Tomsia K., Goldys E., Phillips M.
Acta Physica Polonica A
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2005
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vol. 108
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issue 5
897-902
EN
In this work we evaluate structural and optical properties of ZnO nanoparticles grown by wet chemistry method. Light emission properties of these nanoparticles are studied with cathodoluminescence and micro-photoluminescence. Even at the room temperature excitonic emission is well resolved, due to high exciton binding energy of ZnO. Decay kinetics of photoluminescence emissions and efficiency of inter-nanoparticles energy migration is evaluated from maps of in-plane variations of photoluminescence decay times measured in microphotoluminescence setup.
5
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Mechanism of Radiative Mn^{2+} Intra-Shell Recombination in Bulk ZnMnS

62%
Ivanov V., Godlewski M., Yatsunenko S., Khachapuridze A., Li M., Gołacki Z.
Acta Physica Polonica A
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2001
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vol. 100
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issue 3
351-355
EN
Origin of a fast component of the photoluminescence decay of Mn^{2+} intra-shell ^4T_1 → ^6A_1 transition is discussed based on the results of photoluminescence, photoluminescence kinetics and optically detected magnetic resonance experiments performed for bulk ZnMnS samples with about 1% Mn fraction. It is demonstrated that a fast component of the photoluminescence decay, reported previously for quantum dot structure and related to quantum confinement effects, is also observed in bulk samples and is related by us to very efficient spin cross-relaxation effects.
6
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Dynamics of Light Emission in CdMnS Nanoparticles

62%
Godlewski M., Yatsunenko S., Drozdowicz-Tomsia K., Goldys E., Phillips M., Klar P., Heimbrodt W.
Acta Physica Polonica A
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2005
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vol. 108
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issue 4
681-688
EN
We demonstrate coexistence of slow and fast components of photoluminescence decay of the Mn^{2+} intra-shell emission in nanoparticles of CdMnS. We explain the observed decrease in PL lifetime of the Mn^{2+} intra-shell transition by high efficiency of spin dependent magnetic interactions between localized spins of Mn^{2+} ions and free carriers. This mechanism is enhanced in nanostructures, but it is also present in bulk samples.
7
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Characterization of ZnO Films Grown at Low Temperature

52%
Przeździecka E., Krajewski T., Wójcik-Głodowska A., Yatsunenko S., Łusakowska E., Paszkowicz W., Guziewicz E., Wachnicki Ł., Szczepanik A., Godlewski M.
Acta Physica Polonica A
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2008
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vol. 114
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issue 5
1303-1310
EN
ZnO thin films were grown by atomic layer deposition method at extremely low temperature using a reactive diethylzinc as a zinc precursor. Optical properties, electrical properties and surface morphology were examined by photoluminescence, Hall effect and atomic force microscope. The study shows correlation between optical, electrical properties and surface morphology in a series of samples of different thickness.
8
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Origin of Ultrafast Component of Photoluminescence Decay in Nanostructures Doped with Transition Metal or Rare-Earth Ions

52%
Godlewski M., Yatsunenko S., Ivanov V., Khachapuridze A., Świątek K., Goldys E., Phillips M., Klar P., Heimbrodt W.
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EN
Bulk samples, layers, quantum well, and quantum dot structures of II-Mn-VI samples all show coexistence of slow and fast components of Mn^{2+} photoluminescence decay. Thus, fast photoluminescence decay cannot be related to low dimensionality of a host material. This also means that the model of the so-called quantum confined atom is incorrect. Based on the results of time-resolved photoluminescence and optically detected magnetic resonance investigations we relate the observed lifetime decrease in Mn^{2+} intra-shell transition to spin dependent magnetic interactions between localized spins of Mn^{2+} ions and between Mn^{2+} ions and spins/magnetic moments of free carriers. The latter mechanism is enhanced in nanostructures.
9
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Microwave-Induced Delocalization of Excitons in Ternary Compounds of II-VI and III-V Semiconductors

42%
Ivanov V., Godlewski M., Khachapuridze A., Yatsunenko S., Wojtowicz T., Karczewski G., Bergman J., Monemar B., Shamirzaev T., Zhuravlev K., Leonardi K., Hommel D.
Acta Physica Polonica A
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2003
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vol. 103
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issue 6
559-566
EN
In this work we employ technique of optically detected cyclotron resonance for evaluation of the role of localization processes in CdTe/CdMnTe and CdMnTe/CdMgTe quantum well structures. From microwave-induced changes of excitonic emissions we evaluate magnitude of potential fluctuations (Stokes shift), correlate optically detected cyclotron resonance results with the results of time-resolved experiments and discuss nature of recombination processes in the limit of a strong localization.
10
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Magnetic, Structural, and Optical Properties of Low Temperature ZnMnO Grown by Atomic Layer Epitaxy

42%
Wójcik A., Kiecana M., Kopalko K., Godlewski M., Guziewicz E., Yatsunenko S., Łusakowska E., Minikayev R., Paszkowicz W., Świątek K., Wilamowski Z., Sawicki M., Dietl T.
Acta Physica Polonica A
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2005
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vol. 108
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issue 5
915-921
EN
Magnetic, structural, and optical properties of ZnMnO films grown with atomic layer epitaxy are discussed. Atomic layer epitaxy films were grown at low temperature using organic zinc and manganese precursors. From magnetometry and electron spin resonance investigations we conclude that lowering of a growth temperature significantly limits formation of Mn precipitates and inclusions of different foreign phases of manganese oxides to ZnMnO host.
11
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Spin Dependent Interactions of Free Carriers and Manganese Ions in Nanostructures of Wide Band Gap II-Mn-VI Semiconductors - Mechanism of Lifetime Reduction

42%
Yatsunenko S., Khachapuridze A., Ivanov V., Godlewski M., Khoi L., Gołacki Z., Karczewski G., Goldys E., Phillips M., Klar P., Heimbrodt W.
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EN
Based on the results of optically detected magnetic resonance and time-resolved investigations we relate the observed lifetime shortening of intra-shell Mn^{2+} emission to spin dependent magnetic interactions between localized spins of Mn^{2+} ions and spins/magnetic moments of free carriers. We show that this mechanism is active in both bulk and in low dimensional structures, such as quantum wells, quantum dots, and nanostructures.
12
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Extra-Low Temperature Growth of ZnO by Atomic Layer Deposition with Diethylzinc Precursor

42%
Kowalik I., Guziewicz E., Kopalko K., Yatsunenko S., Godlewski M., Wójcik A., Osinniy V., Krajewski T., Story T., Łusakowska E., Paszkowicz W.
Acta Physica Polonica A
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2007
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vol. 112
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issue 2
401-406
EN
ZnO thin films were grown on silicon substrate by atomic layer deposition method. We explored double-exchange chemical reaction and used very volatile and reactive diethylzinc as a zinc precursor. These enables us to obtain zinc oxide thin films of high quality at extremely low growth temperature (90-200ºC). The films are polycrystalline as was determined by X-ray diffraction and show flat surfaces with roughness of 1-4 nm as derived from atomic force microscopy measurements. Photoluminescence studies show that an edge emission of excitonic origin is observed even at room temperature for all investigated ZnO layers deposited with the diethylzinc precursor.
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