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Magnetic and Structural Studies of GeMnSnTe Epitaxial Layers

100%
Grochot A., Knoff W., Taliashvili B., Wołkanowicz W., Minikayev R., Pieniążek A., Łusakowska E., Sawicki M., Jantsch W., Story T., Przybylińska H.
Acta Physica Polonica A
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2017
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vol. 132
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issue 2
340-342
EN
MBE grown Ge_{1-x-y}Mn_xSn_yTe layers with Mn content ranging from 10 to 30% and Sn content ranging from 2 to 5% have been characterized with X-ray diffraction, energy-dispersive X-Ray spectroscopy, atomic force microscopy, SQUID magnetometry, and ferromagnetic resonance. All layers (except the one with the highest Mn and Sn content) were found to be single phase rhombohedral, with the distortion axis perpendicular to the layer surface, and ferromagnetic. Ferromagnetic resonance studies have shown that co-doping with a few percent of tin makes the lattice more rigid and changes considerably the magnetocrystalline anisotropy, from purely uniaxial in GeMnTe to distorted cubic in Ge_{1-x-y}Mn_xSn_yTe at the same Mn content.
2
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Microstructural study of MBE-grown ZnO film on GaN/sapphire (0001) substrate

100%
Li H., Sang J., Liu C., Lu H., Cao J.
Open Physics
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2008
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vol. 6
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issue 3
638-642
EN
Single crystalline ZnO film is grown on GaN/sapphire (0001) substrate by molecular beam epitaxy. Ga2O3 is introduced into the ZnO/GaN heterostructure intentionally by oxygen-plasma pre-exposure on the GaN surface prior to ZnO growth. The crystalline orientation and interfacial microstructure are characterized by X-ray diffraction and transmission electron microscopy. X-ray diffraction analysis shows strong c-axis preferred orientation of the ZnO film. Cross-sectional transmission electron microscope images reveal that an additional phase is formed at the interface of ZnO/GaN. Through a comparison of diffraction patterns, we confirm that the interface layer is monoclinic Ga2O3 and the main epitaxial relationship should be $$ (0001)_{ZnO} \parallel (001)_{Ga_2 O_3 } \parallel (0001)_{GaN} $$ and $$ [2 - 1 - 10]_{ZnO} \parallel [010]_{Ga_2 O_3 } \parallel [2 - 1 - 10]_{GaN} $$.
3
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Spin-Dependent Interaction of a Band Electron with Paramagnetic Impurities

100%
Blinowski J., Kacman P.
Acta Physica Polonica A
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1991
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vol. 79
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issue 1
145-148
EN
A band electron interacting with N electrons in a d-shell of a paramagnetic impurity in zinc-blende type semiconductors was considered. The hybridization of band and d-states in the crystal field and the nonorthogonality mechanisms of interaction were examined in addition to the standard direct exchange. The Heisenberg-type form was derived for the interaction between a Γ_8-electron and an impurity with a half-filled d-shell. The domination of the hybridization mechanism explains the observed sign of the effective exchange constant for Γ_8 electrons in diluted magnetic semiconductors (DMS) and the difference in magnitude of this constant for Mn^{2+} and Fe^{3+} ions in HgSe.
4
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Magnetic cluster developement in In1−x MnxSb semiconductor alloys

84%
Rednic L., Deac I., Dorolti E., Coldea M., Rednic V., Neumann M.
Open Physics
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2010
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vol. 8
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issue 4
620-627
EN
X-ray Diffraction (XRD), X-ray Photoelectron Spectroscopy (XPS), Transmission Electron Microscopy (TEM) and magnetic measurements as a function of applied magnetic field and temperature for In1−x MnxSb (0.05≤x≤0.2) system are reported. Magnetic measurements performed at high and small magnetic field in ZFC and FC indicate the coexistence of ferromagnetic In1−x MnxSb solid solution and two types of magnetic cluster: ferromagnetic MnSb and ferrimagnetic Mn2Sb. XPS valence band and Mn 2p core level spectra have confirmed the presence of MnSb and Mn2Sb phases. TEM images show some manganese antimonide phase microinclusions with dimension between (30–40) nm.
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