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InAs on InP Quantum Dashes as Single Photon Emitters at the Second Telecommunication Window: Optical, Kinetic, and Excitonic Properties

100%

Mrowiński P., Dusanowski Ł., Somers A., Höfling S., Reithmaier J., Misiewicz J., Sęk G.

In this work, InAs/InGaAlAs/InP quantum dashes have been investigated in terms of their optical, kinetic, and excitonic properties with respect to their application within the 1300± 40 nm spectral range, i.e. the O-band of the telecommunication technologies. We focused on the basic excitonic complexes such as neutral exciton, biexciton, and charged exciton, which have been identified by means of photoluminescence measurements. Emission and carriers' dynamics have been analyzed using rate equation model and fitting the experimental data obtained for both continuous-wave and pulsed excitation regimes. There has been found a significant impact of the charge carrier imbalance in the system and electron capturing rate on the dynamics of the optical and electronic transitions, which results in a high occupation of the negatively charged trion state. Autocorrelation measurements show clear antibunching of trion emission for non-resonant excitation which indicates a potential of such kind of emitters as single photon sources for short-range quantum communication schemes.

Temperature Dependence of Photoluminescence from Epitaxial InGaAs/GaAs Quantum Dots with High Lateral Aspect Ratio

84%

Musiał A., Sęk G., Maryński A., Podemski P., Misiewicz J., Löffler A., Höfling S., Reitzenstein S., Reithmaier J., Forchel A.

Acta Physica Polonica A

2011

vol. 120

issue 5

883-887

Hereby, we present a study of a thermal quenching of emission from self-assembled epitaxial highly asymmetric quantum dots in InGaAs/GaAs material system for both ensemble and single dot regime. Pronounced interplay between the intensity of wetting layer and quantum dots originated emission was observed as the temperature was increased, evidencing a thermally activated energy transfer between the two parts of the system and an important role of the wetting layer in determining the optical properties of these anisotropic nanostructures. The carrier activation energies have been derived and possible carrier loss mechanisms have been analyzed. Single dot study revealed activation energies slightly varying from dot to dot due to size and shape distribution. The problem of the shape uniformity of individual quantum dot has also been addressed and possibility of additional carrier localization within the investigated structures has been found to be insignificant based on the recorded spectroscopic data.

Effect of Dielectric Medium Anisotropy on the Polarization Degree of Emission from a Single Quantum Dash

68%

Mrowiński P., Tarnowski K., Olszewski J., Somers A., Kamp M., Höfling S., Reithmaier J., Urbańczyk W., Misiewicz J., Machnikowski P., Sęk G.

Acta Physica Polonica A

2016

vol. 129

issue 1a

A-48-A-52

Excitonic emission from single InAs/InGaAlAs/InP quantum dashes has been investigated in the context of degree of linear polarization by post-growth modification of its surrounding dielectric medium. We present optical spectroscopy measurements on a symmetric squared pedestal structures (mesas), and asymmetric rectangular ones oriented parallel or perpendicular to the main in-plane axis of the dashes [1-10]. Polarization resolved microphotoluminescence shows a significant quantitative modification of the degree of linear polarization value from -20% up to 70%. These results have been confronted with calculations of the coupling between the exciton transition dipole moment and electromagnetic field distributed in the vicinity of a quantum dash inside a processed mesa.

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3 Acta Physica Polonica A

1 2017

1 2016

1 2011

3 Höfling S.

3 Misiewicz J.

3 Reithmaier J.

3 Sęk G.

2 Mrowiński P.

2 Somers A.

1 Dusanowski Ł.

1 Forchel A.

1 Kamp M.

1 Löffler A.

1 Machnikowski P.

1 Maryński A.

1 Musiał A.

1 Olszewski J.

1 Podemski P.

1 Reitzenstein S.

1 Tarnowski K.

1 Urbańczyk W.

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InAs on InP Quantum Dashes as Single Photon Emitters at the Second Telecommunication Window: Optical, Kinetic, and Excitonic Properties

Temperature Dependence of Photoluminescence from Epitaxial InGaAs/GaAs Quantum Dots with High Lateral Aspect Ratio

Effect of Dielectric Medium Anisotropy on the Polarization Degree of Emission from a Single Quantum Dash