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Zinc Oxide by Atomic Layer Deposition for the second and third generation of photovoltaic cells

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Godlewski M., Łuka G., Kopalko K., Guziewicz E.
Biuletyn Polskiego Stowarzyszenia Wodoru i Ogniw Paliwowych
|
2011
|
issue 6
8-11
EN
ZnO films deposited by Atomic Layer Deposition (ALD) method at different growth conditions have required electron concentrations and electron mobilities for applications as n-type partners to ptype CdTe (ZnO layers with a reduced free electron concentration) and the transparent conductive oxide (TCO, metallic ZnO films). In the latter case their electrical properties are comparable to those of ITO and ZnO:Al (AZO) films obtained by a sputtering. We also demonstrate that ZnO films deposited by the ALD are suitable for construction of hybrid structures (semiconductor/organic material) for applications in novel photovoltaic (PV) panels based on organic materials (PV cells of the third generation).
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