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1

Magnetoluminescence Studies of GaN:Fe

100%

Niedźwiadek A., Wysmołek A., Wasik D., Potemski M., Szczytko J., Kamińska M., Twardowski A., Łucznik B., Pastuszka B., Grzegory I.

Acta Physica Polonica A

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2007

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vol. 112

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issue 2

177-182

EN

We report on magneto-optical studies on iron doped GaN crystals grown using hydride vapor phase epitaxy method on bulk GaN substrate. The investigated samples showed an intensive 1.3 eV luminescence band, characteristic of Fe^{3+}(d^5) center in GaN. A high quality of the investigated samples allowed us to observe a well-resolved fine structure of intracenter transitions between ^4T_1(G) and ^6A_1(S) states, consisting of four sharp no-phonon lines. All the observed no-phonon lines showed pronounced splittings in magnetic field. From the analysis of the magneto-optical data, the structure of split ^4T_1(G) multiplet in the magnetic field applied along c-axis of GaN crystals was established.

2

Optically Pumped Laser Action on Nitride Based Separate Confinement Heterostructures Grown along the (11¯20) Crystallographic Direction

81%

Teisseyre H., Szymański M., Khachapuridze A., Skierbiszewski C., Feduniewicz-Żmuda A., Siekacz M., Łucznik B., Kamler G., Kryśko M., Suski T., Perlin P., Grzegory I.

Acta Physica Polonica A

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2007

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vol. 112

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issue 2

467-472

EN

The intention of this work is to discuss and report on our research on nonpolar laser structures grown on bulk GaN crystal substrates along the (11¯20) nonpolar direction. The main advantages of such nonpolar structures are related to the elimination of the built-in electric fields present in commonly used systems grown along the polar (0001) axis of nitride crystals. We demonstrated the optically pumped laser action on separate confinement heterostructures. Laser action is clearly shown by spontaneous emission saturation, abrupt line narrowing, and strong transversal electric polarization of output light. The lasing threshold was reached at an excitation power density of 260 kW/cm^2 for a 700μm long cavity (at room temperature).

3

High Resistivity GaN Single Crystalline Substrates

81%

Porowski S., Boćkowski M., Łucznik B., Grzegory I., Wróblewski M., Teisseyre H., Leszczyński M., Litwin-Staszewska E., Suski T., Trautman P., Pakuła K., Baranowski J.

Acta Physica Polonica A

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1997

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vol. 92

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issue 5

958-962

EN

High resistivity 10^{4}-10^{6} Ω cm (300 K) GaN single crystals were obtained by solution growth under high N_{2} pressure from melted Ga with 0.1-0.5at.% of Mg. Properties of these crystals are compared with properties of conductive crystals grown by a similar method from pure Ga melt. In particular, it is shown that Mg-doped GaN crystals have better structural quality in terms of FWHM of X-ray rocking curve and low angle boundaries. Temperature dependence of electrical resistivity suggests hopping mechanism of conductivity. It is also shown that strain free GaN homoepitaxial layers can be grown on the Mg-doped GaN substrates.

4

Blue Laser on High N_2 Pressure-Grown Bulk GaN

62%

Grzegory I., Boćkowski M., Krukowski S., Łucznik B., Wróblewski M., Weyher J., Leszczyński M., Prystawko P., Czernecki R., Lehnert J., Nowak G., Perlin P., Teisseyre H., Purgał W., Krupczyński W., Suski T., Dmowski L., Litwin-Staszewska E., Skierbiszewski C., Łepkowski S., Porowski S.

Acta Physica Polonica A

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2001

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vol. 100

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issue Supplement

229-232

EN

In this note we report briefly on the details of pulsed-current operated "blue" laser diode, constructed in our laboratories, which utilizes bulk GaN substrate. As described in Ref. [1] the substrate GaN crystal was grown by HNPSG method, and the laser structure was deposited on the conducting substrate by MOCVD techniques (for the details see Sec. 2 and Sec. 4 of Ref.~[1], respectively).

Refine search results

Magnetoluminescence Studies of GaN:Fe

Optically Pumped Laser Action on Nitride Based Separate Confinement Heterostructures Grown along the (11¯20) Crystallographic Direction

High Resistivity GaN Single Crystalline Substrates

Blue Laser on High N_2 Pressure-Grown Bulk GaN