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Interband Absorption in InGaAs/GaAs Quantum Well at High Hydrostatic Pressure

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Sosin T., Perlin P., Trzeciakowski W., Tober R.
Acta Physica Polonica A
|
1993
|
vol. 84
|
issue 4
749-752
EN
The interband absorption of strained InGaAs/GaAs multiple quantum well was studied at room temperature for pressures up to 5.5 GPa. Three absorption lines were attributed to the excitonic transitions hh1-e1, lh1-e1 and hh2-e2. They were visible until pressure of about 5 GPa which is above the Γ-X crossover for this system. Pressure coefficients of the observed lines were compared with the literature data. The origin of broadening of the lines above Γ-X crossover is discussed.
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