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1

Temperature Dependent Electron Beam Induced Current Study of Defects in Silicon

100%

Sekiguchi T., Kusanagi S., Miyamura Y., Sumino K.

Acta Physica Polonica A

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1993

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vol. 83

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issue 1

71-79

EN

A new computer-aided electron beam induced current system was developed which makes it possible to obtain two-dimensional mapping of the absolute magnitudes of electron beam induced current signals over the temperature range 15 K-400 K. Electronic states of defects in cast silicon and deformation-induced dislocations in float-zone silicon were investigated from the analyses of temperature dependencies of electron beam induced current contrasts of the defects measured with the system. Electron beam induced current active defects in cast Si were identified to be Fe impurity atoms or Fe-B pairs incorporated at the dislocation core depending on the cooling rate of a crystal. Dislocations in float-zone silicon were shown to have an energy level for carrier recombination in the lower half of the band gap.

2

Dislocation Generation and Propagation across the Seed in Seed Cast-Si Ingots

76%

Miyamura Y., Chen J., Prakash R., Jiptner K., Harada H., Sekiguchi T.

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vol. 125

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issue 4

1024-1026

EN

We have studied the dislocation generation and propagation from the seed crystals during seed cast Si growth. The grown ingot was cut into a vertical wafer, followed by the dislocation imaging using X-ray topography and Secco etching. The dislocation behavior at the seed area was compared with the dislocation generation at the top surface due to the thermal stress during cooling. The dislocations at the seed/crystal interface have propagated on the {111} plane toward top. When the seed surface was not melted sufficiently, the interface defect density became high, but no clear dislocation propagation was recognized. This suggests that the thermal shock at the seed/melt interface was not high enough to propagate dislocations to the growth direction. A certain amount of dislocations has been introduced from the top into the ingot according to the thermal stress. These observations suggest that optimizing the initial growth condition is important to dislocation control.

3

Focused Ion Beam Imaging of Defects in Multicrystalline Si for Photovoltaic Application

76%

Miyamura Y., Sekiguchi T., Chen J., Li J., Watanabe K., Kumagai K., Ogura A.

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vol. 125

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issue 4

991-993

EN

We demonstrate the imaging of the extended defects in Si materials using a focused ion beam instrument. Since Ga-ion beam has small penetration depth and high channeling character compared with electron beam, the secondary electron signal of focused ion beam is more sensitive to the surface morphology and crystallinity. We have tried to use this secondary electron imaging of focused ion beam for observation of various extended defects in Si materials for photovoltaic and semiconductor devices. As for the texture of multicrystalline Si, some grains are imaged darker than the others. It suggests that the crystal orientation gives different channeling effect on the primary Ga-ion beam, resulting in the different secondary electron yield. The grain boundaries and lineage in multicrystalline Si are shown as bright lines and patterns in the image. Although it may reflect the surface morphologies, these contrasts may be attributed to the channeling contrast due to lattice displacement or distortion. The contrast mechanism of FIB imaging is discussed.

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3 Acta Physica Polonica A

2 2014

1 1993

3 Miyamura Y.

3 Sekiguchi T.

2 Chen J.

1 Harada H.

1 Jiptner K.

1 Kumagai K.

1 Kusanagi S.

1 Li J.

1 Ogura A.

1 Prakash R.

1 Sumino K.

1 Watanabe K.

Temperature Dependent Electron Beam Induced Current Study of Defects in Silicon

Dislocation Generation and Propagation across the Seed in Seed Cast-Si Ingots

Focused Ion Beam Imaging of Defects in Multicrystalline Si for Photovoltaic Application