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Infrared Lateral Photoconductivity of InGaAs Quantum Dots: the Temperature Dependence

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Moldavskaya L., Shashkin, V., Drozdov, M., Daniltsev V., Antonov A., Yablonsky A.
Acta Physica Polonica A
|
2003
|
vol. 103
|
issue 6
579-584
EN
We report the temperature dependence of lateral infrared photoconductivity in multilayer InGaAs/GaAs heterostructures with selectively doped quantum dots fabricated by metalorganic chemical vapor deposition. Two spectral lines of normal-inci dence intersubband photoconductivity (90 meV and 230 meV) and a line originating from interband transitions (930 meV) were observed. The photoconductivity line 230 meV is revealed up to the temperature 140 K. The long-wavelength photoconductivity line 90 meV is quenched rapidly at the temperature 30÷40 K owing to redistribution of photoexcited carriers between small and large dots. The obtained results confirm the hypothesis about bimodal distribution of quantum dot sizes.
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