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1
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Defect Range and Evolution in Swift Xe-Ion Irradiated Pure Silver Studied by Positron Annihilation Technique

100%
Dryzek J., Horodek P., Skuratov V.
Acta Physica Polonica A
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2017
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vol. 132
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issue 5
1585-1589
EN
Variable energy positron beam and positron lifetime spectroscopy were used to study pure silver samples exposed to irradiation with swift Xe²⁶⁺ ions of energy 167 MeV with different dose: of 10¹³, 5×10¹³ and 10¹⁴ ions/cm². The positron lifetime spectroscopy revealed the presence of dislocations or vacancies associated with dislocations. They are distributed at the depth of about 6 μm, and this correlates with the ion implantation range, i.e. 9 μm. However, some defects are observed also to a depth of about 18 μm. At the depth less than 1 μm from the entrance surface strong dependence of positron diffusion length on the dose is observed. It indicates the presence of interstitial atoms and/or dislocation loops as a result of Xe²⁶⁺ ions implantation.
2
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Swift Xe^{26+} Ion Irradiation Effect on Luminescent Properties of Undoped and Cd-Doped ZnO Films

76%
Myroniuk D., Lashkarev G., Shtepliuk I., Skuratov V., Reszka A., Kowalski B.
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vol. 126
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issue 5
1199-1202
EN
Here we report the effect of the irradiation by 167 MeV Xe^{26+} ions (in the fluence range up to 3× 10^{12} ions/cm^2) on the undoped and Cd-doped (0.4, 0.5 at.%) ZnO films deposited by radiofrequency magnetron sputtering. As-grown and irradiated samples were investigated by cathodoluminescence spectroscopy. It was found that the radiation causes a decrease in intensity of luminescent peaks and a redistribution of the radiative recombination channels. We revealed that the cadmium incorporation into ZnO lattice enhances the radiation resistance of ZnO film.
3
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Current-Voltage Characteristic Features of Diodes Irradiated with 170~MeV Xenon Ions

64%
Poklonski N., Gorbachuk N., Nha V., Tarasik M., Shpakovski S., Filipenia V., Skuratov V., Wieck A., Kołtunowicz T.
Acta Physica Polonica A
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2013
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vol. 123
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issue 5
926-928
EN
Diodes manufactured on the wafers of single-crystalline silicon uniformly doped with phosphorus are studied. The wafer resistivity was 90 Ω cm. Xenon ions were implanted into the diodes from the side of the p^{+}-region (implantation energy 170 MeV, fluence Φp from 5 × 10^7 to 10^9 cm^{-2}). It is shown that the formation of a continuous irradiation damaged layer with the thickness of the order of magnitude of the average projective range creates prerequisites for the negative differential resistance in the current-voltage characteristics of the irradiated diodes.
4
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Ion-Induced Modification of Structure and Magnetic Anisotropy in Granular FeCoZr-CaF₂ Nanocomposite Films

64%
Kasiuk J., Fedotova J., Przewoznik J., Kapusta C., Skuratov V., Milosavljevic M., Bondariev V., Koltunowicz T.
Acta Physica Polonica A
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2015
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vol. 128
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issue 5
828-831
EN
The paper reports on the results of structural analysis and magnetometry of granular nanocomposite films FeCoZr-CaF₂ irradiated with Xe and Kr ions at different fluences. The observed effect of enhanced perpendicular magnetic anisotropy characterizing pristine films is discussed with respect to the irradiation regimes and structural changes of the films originating from the impact of ions.
5
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Magnetotransport in Si ⟨Sb⟩ Delta-Layer after Swift Heavy Ion-Induced Modification

64%
Fedotov A., Skuratov V., Yurasov D., Novikov A., Svito I., Apel P., Fedotov A., Zukowski P., Fedotova V.
Acta Physica Polonica A
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2017
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vol. 132
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issue 2
229-232
EN
In the present paper the investigations of the influence of swift heavy ion irradiation on the magnetotransport in the antimony (Sb) δ-layer in silicon are reported. Temperature and magnetic field dependences of the resistance R(T,B) and the Hall coefficient R_H(T,B) in the temperature range of 2K < T < 300K and B ≤ 8T before and after the 167 MeV Xe⁺²⁶ ion irradiation (ion fluence of 10⁸ cm¯²) were measured. At the temperatures below 50K there is observed the transition from the Arrhenius log R(1/T) to a logarithmic R ≈ -log(T) dependence both before and after the swift heavy ion exposure which confirms the assumption that the carrier transport goes through the δ-layer mainly. Moreover, the transition from the positive to negative magnetoresistance was observed with the temperature decrease that is characteristic of the two-dimensional quantum corrections to the conductivity in the case of weak localization regime. The appropriate Thouless lengths L_{Th}(T) ≈ A × T^{p} (where p and A are dependent on the scattering mechanism) indicated their ≈ 25-30% decrease after the swift heavy ion exposure. It was shown that the exponent p values were close to the theoretical one of p = 1, confirming the realization of 2D weak localization regime in the carrier transport.
6
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Effects of Fluences of Irradiation with 107 MeV Krypton Ions on the Recovery Charge of Silicon p^{+}n-Diodes

64%
Poklonski N., Gorbachuk N., Tarasik M., Shpakovski S., Filipenia V., Skuratov V., Wieck A., Kołtunowicz T.
Acta Physica Polonica A
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2011
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vol. 120
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issue 1
111-114
EN
The diodes manufactured on the wafers of single-crystalline silicon uniformly doped with phosphorus are studied. The wafer resistivity was 90 Ω cm. Krypton ions are implanted to the side of the p^{+}-region of diodes (energy 107 MeV, fluence Φp from 5 × 10^7 to 4 × 10^9 cm^{-2}). It is shown that recovery charge Q_{rr} is inversely proportional to the square root of the irradiation fluence value Φp. When the fluence increases, the part of the recovery charge Q_{rrA}, due to the high reverse conductance phase, decreases faster than the value Q_{rr}.
7
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Ion Irradiation of Oxidized FeCoZr-CaF₂ Nanocomposite Films for Perpendicular Magnetic Anisotropy Enhancement

64%
Kasiuk J., Fedotova J., Przewoźnik J., Kapusta C., Skuratov V., Svito I., Bondariev V., Kołtunowicz T.
Acta Physica Polonica A
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2017
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vol. 132
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issue 2
206-209
EN
The paper is focused on the results of Xe ions irradiation of nanocomposite FeCoZr-CaF₂ films synthesized in the oxygen-containing atmosphere. Combined influence of nanoparticles partial oxidation and ion irradiation with different fluences on the crystalline structure, phase composition and magnetic anisotropy is analysed by X-ray diffraction, the Mössbauer spectroscopy and vibrating sample magnetometry. The origin of the detected progressive enhancement of perpendicular magnetic anisotropy as the result of films oxidation and irradiation is discussed in the context of formation of nanoparticles oxide shells and ion tracks along the films normal.
8
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Influence of Defects Introduced by Irradiation with 4-9 MeV Helium Ions on Impedance of Silicon Diodes

64%
Poklonski N., Gorbachuk N., Nha V., Shpakovski S., Filipenya V., Skuratov V., Kołtunowicz T., Kukharchyk N., Becker H., Wieck A.
Acta Physica Polonica A
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2015
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vol. 128
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issue 5
891-893
EN
Silicon diodes irradiated with helium ions with energies of 4.1, 6.8 and 8.9 MeV are studied. It is shown that the mechanism determining the behaviour of frequency dependence of complex electric module and correspondingly the behavior of impedance of diodes irradiated with helium ions in the frequency region 3-200 kHz is a recharging of vacancy complexes localized in the space charge region.
9
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Positron and Positronium Trapping in Heat Treated Zeolites (Ceramics), the Effect of Swift Heavy Ion Irradiation

52%
Major P., Kajcsos Z., Liszkay L., Zalán P., Kosanović C., Bosnar S., Subotić B., Lázár K., Skuratov V., Havancsák K., Gordo P., Ferreira Marques M.
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EN
A systematic study of zeolite precursor gels, zeolites, and products of their recrystallization to ceramics was carried out in presence of various alkali ions. The investigation of radiation damage induced by high-energy ion beam irradiation with swift heavy ions (Bi ions at 670 MeV energy with 4×10^{12} ion/cm^2 fluence) was also included. The shortening of lifetimes found after irradiation in ceramics might probably be ascribed to interactions of o-Ps with free radicals and other quenching agents created through the ion irradiation. These lifetime-shortening interactions probably partly hide the o-Ps trapping in free volume sites.
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