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Ferromagnetic Behavior of a Short Period Antiferromagnetic Superlattice

100%

Wilamowski Ż., Jantsch W., Faschinger W.

Acta Physica Polonica A

1995

vol. 87

issue 1

185-188

We present a study of short period MnTe/CdTe superlattices by magnetic resonance. The usually antiferromagnetic structure exhibits critical line broadening above the Néel temperature typical of antiferromagnetic ordering, but also some ferromagnetic properties at lower temperature. We suggest that the observed ferromagnetic-like moment originates from coupling of the moments of the recently proposed strong magnetic polarons.

Strain Relaxation Induced Red Shift of Photoluminescence of CdZnSe/ZnSe Quantum Wires

88%

Straub H., Brunthaler G., Faschinger W., Bauer G., Vieu C.

Acta Physica Polonica A

1996

vol. 90

issue 5

1085-1089

Wire patterns (80-1000 nm) of molecular beam epitaxy grown Cd_{0.2}Zn_{0.8}Se/ZnSe quantum well were fabricated by a CH_{4}/H_{2} reactive ion etching technique. Photoluminescence emission shows with decreasing lateral size a broadening of line shape and a spectral red shift. Calculations for the change of the band gap due to strain relaxation show that this shift of the photoluminescence emission for narrow Cd_{0.2}Zn_{0.8}Se/ZnSe structures (lattice mismatch of 1.34%) can be explained by a partial elastic strain relaxation of the biaxially compressively strained Cd_{0.2}Zn_{0.8}Se quantum well after the patterning process.

Investigations on ZnSe/GaAs Interface by Treatment of GaAs (2×4) Surface with Te and Mg

64%

Ebel R., Spahn W., Ress H., Albert D., Schäfer H., Ehinger M., Faschinger W., Landwehr G.

Acta Physica Polonica A

1996

vol. 90

issue 4

767-772

The heterovalent interface ZnSe/GaAs, despite the small lattice misfit, still poses certain problems. The condition of the substrate surface prior to growth start determines the initial growth conditions, which on the other hand are assumed to be responsible for defect densities. Since Zn, in contrast to Se, hardly binds to GaAs the initial surface during growth start is essentially Se terminated. Therefore the binding of Mg to Se terminated GaAs was investigated. The structural quality of 140 nm thick ZnSe layers on different MgSe coverages were compared to conventionally grown and Te initiated ZnSe epilayers of the same thickness.

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3 Acta Physica Polonica A

2 1996

1 1995

3 Faschinger W.

1 Albert D.

1 Bauer G.

1 Brunthaler G.

1 Ebel R.

1 Ehinger M.

1 Jantsch W.

1 Landwehr G.

1 Ress H.

1 Schäfer H.

1 Spahn W.

1 Straub H.

1 Vieu C.

1 Wilamowski Ż.

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Ferromagnetic Behavior of a Short Period Antiferromagnetic Superlattice

Strain Relaxation Induced Red Shift of Photoluminescence of CdZnSe/ZnSe Quantum Wires

Investigations on ZnSe/GaAs Interface by Treatment of GaAs (2×4) Surface with Te and Mg