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Electron-Phonon Interaction as a Mechanism of Phase Transition in the CuInP_{2}S_{6} Crystal

100%
Bercha D., Bercha S., Glukhov K., Sznajder M.
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vol. 126
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issue 5
1143-1145
EN
Studies on the phases of CuInP_{2}S_{6} crystal exhibiting phase transitions of the order-disorder type are performed. A possibility for the cooperative Jahn-Teller effect to occur in this crystal is analyzed. For this purpose, the procedure of constructing the potential energy matrix is generalized for the case of crystal and it is illustrated by the construction of the adiabatic potentials for Γ_{5}-Γ_{5} vibronic coupling for the proto- and paraelectric phases of CuInP_{2}S_{6}. The structure of the obtained potentials is analyzed together with the discussion on the appearance of spontaneous polarization in this crystal.
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Construction of the Adiabatic Potential of a Symmetric Molecule in the Vicinity of Charged Semiconductor Surface

100%
Bercha S., Glukhov K., Kharkhalis L., Sznajder M.
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EN
We present a description of the symmetry-based method for the construction of the adiabatic potential of a symmetric molecule near the charged semiconductor surface. For this purpose, a transformation of the adiabatic potential of a free high symmetric molecule (D_{3d}) in the presence of uniform electric field is investigated. The obtained adiabatic potential is analyzed with respect to the stability of molecule in the vicinity of charged surface, as a dependence of its orientation in the electric field.
3
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Band Structure and Optical Properties οf the Layered Hg_{3}TeCl_{4} Crystal

76%
Sznajder M., Bercha D., Potera P., Khachapuridze A., Panko V., Bercha S.
Acta Physica Polonica A
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2009
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vol. 116
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issue 5
950-951
EN
First experimental investigations on absorption and photoluminescence of the novel Hg_{3}TeCl_{4} monocrystals grown by the Bridgman method are reported. A comparison of the measurement results with theoretical band structure calculations of the Hg_{3}TeCl_{4} crystal confirmed that Hg_{3}TeCl_{4} is a wide-band-gap photoconductor (E_{g}= 3.64 eV at 24 K) with the effective masses of charge carriers characteristic for semiconductors. Energetic position of the main photoluminescence peak and its temperature dependence indicates the presence of an additional energy level in the energy gap which takes part in the radiative recombination process and whose origin was discussed.
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