Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl
Preferences help
Polish version English version Language
enabled [disable] Abstract
Number of results

Results found: 3

Number of results on page
first rewind previous Page / 1 next fast forward last

Search results

help Sort By:

help Limit search:
first rewind previous Page / 1 next fast forward last
1
Content available remote

Ac Conductivity Measurement of Cd_{5}Se_{95-x}Zn_{x} Chalcogenide Semiconductor Using Correlated Barrier Hopping Model

100%
Ganaie M., Zulfequar M.
Acta Physica Polonica A
|
2015
|
vol. 128
|
issue 1
59-63
EN
Cd_{5}Se_{95-x}Zn_{x} (x=0, 2, 4, 6) chalcogenide semiconductors were prepared by conventional melt-quenching and were characterized by X-ray diffraction, scanning electron microscopy, and Fourier transform infrared studies. Ac conductivity of Cd_{5}Se_{95-x}Zn_{x} chalcogenide semiconductor has been investigated in the frequency range of 1 kHz-1 MHz and in the temperature range of 290-370 K. The analysis of the experimental results indicates that the ac conductivity is temperature, frequency and concentration dependent. Ac conductivity is found to obey the power law ω^{s} where s < 1. A strong dependence of ac conductivity and exponent s can be well interpreted in terms of correlated barrier hopping model. The maximum barrier height W_{m} were calculated from the results of dielectric loss according to the Guintini equation that agree with the theory of hopping of charge carriers over potential barrier as suggested by Elliot in case of chalcogenide semiconductors.
2
Content available remote

Electrical Conductivity and Thermoelectric Power of a-Se_{80-x}Ga_{20}Te_{x} (x=0,5,10,15 and 20) Thin Films

81%
Khan Z. H., Zulfequar M., Ilyas M., Husain M.
Acta Physica Polonica A
|
2000
|
vol. 98
|
issue 1-2
93-102
EN
The dc conductivity and thermoelectric power of a-Se_{80-x}Ga_{20}Te_{x} (x=0,5,10,15 and 20) thin films were reported in the present work. The free charge carrier concentration was calculated with the help of dc conductivity and thermoelectric power measurements. The calculated values of free charge carrier concentration were used to evaluate the free charge carrier mobility from which grain boundary potential was evaluated. The results are interpreted in terms of small polaron hopping, the structure of Se-Te and the grain boundary potential barrier.
3
Content available remote

Synthesis and characterization of polyaniline-polyvinyl chloride blends doped with sulfamic acid in aqueous tetrahydrofuran

71%
Ameen S., Ali V., Zulfequar M., Mazharul Haq M., Husain M.
Open Chemistry
|
2006
|
vol. 4
|
issue 4
565-577
EN
The temperature dependence of direct current (dc) conductivity was studied for various samples of polyaniline-polyvinylchloride (PANI-PVC) blended films. Polyaniline was doped with different concentrations of sulfamic acid in aqueous tetrahydrofuran (THF) and the blended films were prepared by varying the amount of doped PANI relative to a fixed amount of PVC. The dc conductivity of PANI-PVC blended films was measured to determine the effect of sulfamic acid (dopant) in the temperature range (300–400K). The mechanism of conduction is explained by a two-phase model. In order to evaluate the effect of the dopant, conductivity-derived parameters such as the pre-exponential factor (σ o) and the activation energy (ΔE) were calculated. The structural changes of polyaniline-PVC blended films were characterized by FTIR spectroscopy that explores information about the suitability of the dopant in the chemical doping process.
first rewind previous Page / 1 next fast forward last
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.