During recent years diluted magnetic semiconductors based on III-V compounds have been of considerable interest. In this respect we review the basic properties of these materials, which are nearly exclusively Mn-based systems, such as GaMnAs, InMnAs, GaMnSb, and GaN:Mn. We discuss the nature of Mn impurity. Different Mn centers are considered and experimental pieces of evidence suggesting the dominating role of Mn (d^{5}) configuration are given. Then we analyze s, p-d exchange, together with resulting magnetooptical properties (in particular absorption edge slitting for heavily p-type GaMnAs). The coupling between Mn ions (d-d exchange) and ferromagnetic ordering observed in InMnAs and GaMnAs is the next subject. Some mechanisms responsible for this ordering are presented. Finally we discuss transport properties and some selected problems of quantum structures based on III-V diluted magnetic semiconductors.
We review the magnetic and optical properties of recently grown Cr-based II-VI semimagnetic semiconductors. We focus on two features of these materials which distinguish them from other semimagnetic semiconductors: the particular magnetic behaviour of these crystals, resulting from the Cr^{++} ion energy structure determined by a strong, static Jahn-Teller effect, and a ferromagnetic p-d exchange interaction, which is unique for II-VI semimagnetic semiconductors.
We present experimental studies of magnetization of Pb_{1-x}Cr_{x}Te (x ≤ 0.01) crystals. The reasonable description of the data is obtained for a composition of x ≤ 0.001 using Cr^{+++} model (Brillouin type paramagnetism S = 3/2).
We report FIR laser spectroscopy study of Zn_{1-x}Fe_{x}Se (x < 0.06) Semimagnetic Semiconductor at the temperature range of 2-26 K and magnetic fields up to 18T.
We report results of calculations of magnetic properties (specific heat, magnetization) of Fe-based Semimagnetic Semiconductors including Jahn-Teller coupling between Fe electronic states and phonons.
The magnetization measurements at magnetic field up to 6 T obtained from newly grown hexagonal Cd_{1-x}V_{x}S (x ≈ 0.0004) are presented. The strong anisotropy of magnetization is observed at low temperatures (1.6 < T < 20 K). The data are well described by the crystal field model calculations taking into account static trigonal Jahn-Teller distortion and spin-orbit coupling.
We report determination of s, p-d exchange constants for hexagonal CdFeSe combining exciton splitting and magnetization measurements performed on the same samples.
We report ferromagnetic resonance study of the magnetization reversal in the exchange-coupled MnO/(Ga,Mn)As system. The low-field parts of ferromagnetic resonance spectra measured along [1/10] and [100] directions of (Ga,Mn)As were combined into hysteresis loops, which under field-cooling conditions similarly to SQUID loops are shifted toward negative magnetic fields. The magnetization reversal process revealed by the loops occurred remarkably asymmetric for both sample configurations.
Magnetoreflectance and magnetization of ZnCrSe were measured for B ≤ 5 T and T = 2 K. A linear dependence between exciton splitting and magnetization was found. The s, p-d exchange parameter was estimated: N_{0}α-N_{0}β=0.67eV.
We investigated magnetoreflectance and magnetization of highly diluted bulk Cd_{1-x}Mn_{x}Te crystals 0.2% ≤ x ≤ 10%. The exchange constant in terms of mean field approximation and virtual crystal approximation (the ratio of the heavy hole exciton splitting to mean spin per unit cell) was evaluated and found x-dependent. This deviation from the mean field approximation and virtual crystal approximation prediction is caused by the local potential introduced by Mn ions. We discuss the problem within a Wigner-Seitz approach and within a model of magnetic and chemical disorder based on the alloy theory.
High magnetic field electron paramagnetic resonance experiments have been performed on Zn_{1-x}Cr_{x}Te covering the energy range 1-7 cm^{-1} in fields up to 20 T at T = 1.2 K. The static magnetic field was oriented along the (100), (110) and (111) crystallographic axes of the sample. Pronounced absorption lines for intra-chromium transitions have been observed for these different orientations, revealing a strong anisotropy due to a static Jahn-Teller distortion. The measured low energy level structure of the Cr^{++} ion can be described by a cubic crystal field model including this distortion of the Cr centers.
Specific heat of ZnCrSe and ZnCrS was measured for 1.5 < T < 10 K and B < 3 T. The data were interpreted using "crystal field model" taking into account tetrahedral crystal field, tetragonal Jahn-Teller distortion and spin-orbit interaction.
Free exciton magnetoreflectance and magnetization of Cd_{1-x}Cr_{x}S (0.0024 < x < 0.0031) were measured at T = 2.0 K and magnetic field up to 5 T. Combining the heavy hole exciton splitting with the magnetization data the exchange integral N_{0}β = +0.46±0.04 eV was evaluated within the framework of mean field approximation.
GaN:Cr and GaN:Fe single crystals as well as GaN:Mn micropowders highly doped by transition metals were grown to investigate low temperature superconductivity. Magnetic measurements revealed type I superconductivity with T_{C} ≈ 6 K and H_{C} ≈ 600 Oe, identical for all compounds and also identical to that observed before in GaP:Cr and GaAs:Cr. The presence of amorphous inclusions of gallium may explain existing superconductivity as a result of a phase transition leading to β-Ga during cooling down of the sample. Since the observed parameters are close to those characteristic for superconducting Ga(II) this possibility could not be ruled out.
Magnetic properties of bulk wurtzite GaN:Cr single crystals were studied with the magnetic field applied parallel and perpendicular to the crystal wurtzite c-axis. Structure of the crystal was examined by the X-ray diffraction method. Strong anisotropy of magnetization at low temperatures (2-10 K) was observed. The experimental data suggest Cr to be in nonspherical d^4 configuration.
Ferromagnetic resonance study of the exchange coupled (Ga,Mn)As/ GaAs/(Ga,Mn)As heterostructures is reported. The measurements were performed on the series of samples with varying thicknesses d_{GaAs} of nonmagnetic GaAs spacer, established d_{GaAs}-dependent extent of weak and strong interlayer exchange coupling, judging on the observation of one or two ferromagnetic resonance modes.
We report on cross-sectional transmission electron microscopy and magnetic force microscopy studies performed on self-organized MnAs nanoclusters embedded in GaAs. It was found that 10÷20 nm large MnAs ferromagnetic nanocrystals were formed during rapid thermal annealing of Ga_{1-x}Mn_xAs layers at 600ºC, leading to magnetic contrasts in magnetic force microscopy images.
Two (Ga,Mn)As samples having different magnetic anisotropy (one with in-plane easy axis and another one with out-of-plane easy axis) were studied by means of magnetotransport experiments. Anisotropy field B_{A} was determined for both samples as a function of temperature. For the sample having in-plane easy axis, an inversion of the direction of planar Hall effect hysteresis was observed upon increase of temperature. This result was simulated using the Stoner-Wohlfarth model.
Magnetoreflectance from GaAs:Mn was measured in the free exciton range for B ≤ 5 T and T = 2.0 K. Combining optical results with magnetization data the value for the exchange parameter N_{0}α-N_{0}β =-(2.3 ± 0.6) eV was obtained. Assuming that N_{0}α ≈ +0.2 eV, the ferromagnetic p-d exchange interaction was found with the magnitude N_{0}β ≈ +2.5 eV.
We report results of magnetization study of EuS/PbS superstructures with different thicknesses of magnetic and nonmagnetic layers. Reduction of ferromagnetic phase transition temperature was found with decreasing EuS thickness. Reasonable description of this effect is obtained within the model based on the mean field approximation.
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.