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1
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Erbium in Silicon: Possible Light Source for 1.5 μm and Challenge for Defect Physics

100%
Jantsch W., Przybylińska H.
Acta Physica Polonica A
|
1996
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vol. 90
|
issue 4
623-633
EN
The trivalent erbium ion emits at 1.54 μm, independent of the host crystal and temperature. This fact makes Si:Er an interesting candidate for integrated optics in the optimum wavelength regime for fiber optic communication systems. Recent progress in improving the luminescence yield is reviewed and the limiting factors are discussed, namely: the low solubility of different Er centers, thermal quenching of the luminescence above 100 K, the mechanisms for energy transfer from the host crystal to the Er 4f shell and the process induced parasitic recombination channels.
2
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Impurity Self-Screening

100%
Wilamowski Z., Przybylińska H.
Acta Physica Polonica A
|
1993
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vol. 84
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issue 4
832-834
EN
In a mixed valence impurity system the distribution of impurity charges can be adjusted to minimize the Coulomb energy of inter-impurity interactions. In this paper we discuss the possibility of extending the methods of analytical evaluation of the pair correlation function for classical liquids to apply to a system with a built-in disorder, where the occupation probability is governed by the Fermi-Dirac statistics.
3
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Mechanisms of Nonuniform Line Broadening

81%
Wilamowski Ż., Przybylińska H., Jantsch W.
Acta Physica Polonica A
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1995
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vol. 87
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issue 1
181-184
EN
When the spin relaxation time of paramagnetic impurities at different magnetic sites differs by orders of magnitude then instead of resonance line broadening, rather a decay of the line amplitude is expected. In particular, the sp-d coupling of magnetic impurities to shallow impurities leads to a nonuniform distribution of the longitudinal relaxation rates of local spins.
4
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Content available

Magnesium Acceptor Energy Levels in Cubic GaN

81%
Przybylińska H., Buczko R., Kocher G., Jantsch W.
Acta Physica Polonica A
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2003
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vol. 103
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issue 6
683-688
EN
Intra-impurity transitions of the Mg acceptor in cubic phase GaN were measured with the use of photothermal ionization spectroscopy. Apart from the photoionization band several sharp features were detected, related to internal Mg-acceptor transitions. The transitions were identified with the help of effective-mass model calculations involving light- and heavy-hole as well as spin--orbit split-off bands. Transitions to resonant states, associated with the spin-orbit split-off valence band, were also identified. The determined hole binding energy of the Mg acceptor in zinc-blende GaN is 236±1 meV.
5
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Influence of Coimplantation on Activation of Er Emission in Si

81%
Przybylińska H., Hendorfer G., Jantsch W., Palmetshofer L.
Acta Physica Polonica A
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1995
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vol. 87
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issue 2
365-368
EN
The results of high resolution photoluminescence studies of erbium im­planted silicon are presented. We show that the apparent enhancement of Er emission by coimplantation with light elements is not due to formation of Er-dopant complexes, but rather to Er forming complexes with defects induced by the implantation process alone.
6
Content available remote

Erbium Luminescence in Silicon

81%
Przybylińska H., Jantsch W., Palmetshofer L.
Acta Physica Polonica A
|
1996
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vol. 90
|
issue 1
83-92
EN
We report on high resolution photoluminescence investigations of Er-implanted Si and demonstrate the variety of Er centers or complexes with impurities and native Si-defects formed depending on the processing parameters. These centers are shown to differ in the efficiency of excitation transfer as well as high temperature photoluminescence yield. The mechanisms responsible for the photoluminescence quenching at different temperature regimes are discussed.
7
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Recombination Processes for Deep Impurity States Degenerate with the Conduction Band

81%
Świątek K., Godlewski M., Kaliński Z., Przybylińska H.
Acta Physica Polonica A
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1991
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vol. 79
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issue 2-3
243-246
EN
We report on the studies of autoionization efficiency and the relevant recombination mechanism for Eu^{2+} in Ca_{x}Cd_{1-x}F_{2} depending on the energy level position of Eu^{2+} excited states in respect to the conduction band states.
8
Content available remote

Anisotropy of Magnetic Interactions in HgFeSe

81%
Wilamowski Z., Przybylińska H., Joss W., Guillot M.
|
EN
Magnetic properties (susceptibility, high-field torque and magnetization) of cubic HgFeSe are analyzed. Van Vleck magnetism of Fe^{2+} is well evidenced. The energy splitting of the Fe levels in HgSe is shown to differ considerably from that in other II-VI compounds.
9
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Content available

Photoluminescence of Er^{3+} near 1.54μm in Silicon-Rich Silicon Oxide Films

71%
Kuritsyn D., Glukchanyuk V., Przybylińska H., Kozanecki A., Jantsch W.
|
EN
Excitation of the intra-4f-shell luminescence near 1.5μm in silicon-rich silicon oxide is studied. Silicon-rich silicon oxide was produced by high dose implantation of Si^+ ions into SiO_2 layers grown on silicon. Erbium doping was also performed using implantation of Er^+ ions at an energy of 800 keV. An evidence is presented that transfer of energy from defects related to excess silicon in silica is the dominant mechanism of excitation of Er^{3+} for optical pumping in the UV-blue wavelength range. Si-nanocrystals created by annealing at 1100ºC rather compete for excitation with erbium than transfer energy to Er^{3+}.
10
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Optically Active Centers in Er-Implanted Silicon

62%
Przybylińska H., Jantsch W., Hendorfer G., Palmetshofer L., Wilson R. J., Sealy B. J.
Acta Physica Polonica A
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1995
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vol. 88
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issue 5
877-880
EN
We show that of all the optically active Er centers in silicon found after ion implantation and optimum annealing (900°C) the isolated cubic interstitial Er is the dominant PL center above 100 K. At lower anneal temperatures ( ≈ 600°C) with later rapid thermal anneal at 900°C oxygen related centers also emit.
11
Content available remote

Magnetic and Structural Studies of GeMnSnTe Epitaxial Layers

42%
Grochot A., Knoff W., Taliashvili B., Wołkanowicz W., Minikayev R., Pieniążek A., Łusakowska E., Sawicki M., Jantsch W., Story T., Przybylińska H.
Acta Physica Polonica A
|
2017
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vol. 132
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issue 2
340-342
EN
MBE grown Ge_{1-x-y}Mn_xSn_yTe layers with Mn content ranging from 10 to 30% and Sn content ranging from 2 to 5% have been characterized with X-ray diffraction, energy-dispersive X-Ray spectroscopy, atomic force microscopy, SQUID magnetometry, and ferromagnetic resonance. All layers (except the one with the highest Mn and Sn content) were found to be single phase rhombohedral, with the distortion axis perpendicular to the layer surface, and ferromagnetic. Ferromagnetic resonance studies have shown that co-doping with a few percent of tin makes the lattice more rigid and changes considerably the magnetocrystalline anisotropy, from purely uniaxial in GeMnTe to distorted cubic in Ge_{1-x-y}Mn_xSn_yTe at the same Mn content.
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