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Publisher
Institute of Physics, Polish Academy of Sciences
Journal
Acta Physica Polonica A
Year
1993
Volume
84
Issue
4
Identifiers
Cover
Volume contents
4
article:
Porous Silicon - New Luminescent Material or Luminescent Defect?
(
Mizuta M.
), p. 609-620
article:
Thermally Induced Intermixing of InGaAs/GaAs Single Quantum Wells
(
Kozanecki A.
,
Gillin W.
,
Sealy B.
), p. 621-624
article:
Hydrostatic Pressure Studies of Asymmetric Double-Barrier Resonant Tunneling Diodes
(
Diniz R.
,
Smoliner J.
,
Gornik E.
,
Suski T.
,
Meiners U.
,
Brugger H.
), p. 625-628
article:
Field Ionization of Shallow Acceptors
(
Dargys A.
,
Žurauskas S.
,
Žurauskienė N.
), p. 629-632
article:
X-Ray Photoelectron Spectroscopy and X-Ray Diffraction Studies of Zn_{1-x}Co_{x}S Diluted Magnetic Semiconductor Crystals
(
Ławniczak-Jabłońska K.
,
Gołacki Z.
,
Paszkowicz W.
,
Iwanowski R.
,
Johansson L.
,
Heinonen M.
), p. 633-636
article:
Optical Study of an Asymmetric Double Quantum Well System: CdTe/CdMnTe
(
Lawrence I.
,
Feuilet G.
,
Tuffigo H.
,
Bodin C.
,
Cibert J.
,
Rühle W.
), p. 637-640
article:
Magnetic Anisotropy in Pb_{1-x-y}Sn_{y}Mn_{x}Te Studied by Ferromagnetic Resonance
(
Eggenkamp P.
,
Story T.
,
Swüste C.
,
Swagten H.
,
de Jonge W.
), p. 641-644
article:
Potential Fluctuations in HgSe:Fe,Ga - a Numerical Study
(
Sobkowicz P.
,
Wilamowski Z.
,
Kossut J.
), p. 645-648
article:
Evidence of Γ-Free or Bound-to-Deep Acceptor Character of the Y-1.2 eV Deep Photoluminescence Line in n-type Ge-doped GaAs Derived from High Hydrostatic Pressure Experiments in Diamond Anvil Cell
(
Dmochowski J.
,
Stradling R.
,
Prins A.
,
Dunstan D.
,
Adams A.
,
Kukimoto H.
), p. 649-652
article:
Transformation of Native Defects in GaAs under Ultrasonic Treatment
(
Mąkosa A.
,
Wosiński T.
,
Witczak Z.
), p. 653-656
article:
Light-Controlled Transport in Doped Diluted Magnetic Semiconductors near Localization Boundary
(
Głód P.
,
Dietl T.
,
Wojtowicz T.
,
Sawicki M.
,
Miotkowski I.
), p. 657-660
article:
Images of the Response Signal of a 2D Gas of Carriers to a Pulsed Beam of 3D Phonons
(
Jasiukiewicz C.
,
Lehmann D.
,
Paszkiewicz T.
), p. 661-664
article:
Magnetic Susceptibility of Sn_{1-x}Au_{x}Te
(
Górska M.
,
Anderson J.
,
Peng J.
,
Gołacki Z.
), p. 665-668
article:
Highly Compensated GaAs Crystal Obtained by Molecular CO Doping
(
Bożek R.
,
Korona K.
,
Nowak G.
,
Wasik D.
,
Słupiński T.
,
Kaczor P.
), p. 669-672
article:
Deep Level Transient Spectroscopy Measurements of an Acceptor-like State of Metastable EL2 in GaAs and GaAsP
(
Babiński A.
,
Wysmołek A.
,
Słupiński T.
), p. 673-676
article:
Light Induced Ordering of the EL2 Defects in the Metastable State
(
Trautman P.
,
Baranowski J.
), p. 677-680
article:
Application-of Quasi-Forbidden Reflections for Determination of Composition of Pseudobinary Semiconductors
(
Bąk-Misiuk J.
,
Paszkowicz W.
,
Domagała J.
), p. 681-684
article:
Tunneling in Double-Barrier Heterostructures - Comparison of Time-Dependent and Stationary Approach
(
Bała P.
,
Ryszewski R.
,
Bała W.
), p. 685-688
article:
Study of Misfit Dislocations Profiles in ZnSe/GaAs Structures by Raman Scattering
(
Bała W.
,
Drozdowski M.
,
Kozielski M.
), p. 689-692
article:
Kinetic Exchange in Diluted Magnetic Semiconductors of Wurtzite Structure
(
Blinowski J.
,
Kacman P.
), p. 693-696
article:
Exchange Integrals in Hg_{0.95}Mn_{0.05}Se Obtained by the Wave Shape Analysis of Shubnikov-de Haas Oscillations
(
Dybko K.
,
Kossut J.
), p. 697-700
article:
Electric Field Stimulated Emission of Electrons from Deep Traps in SiO_{2}
(
Strzałkowski I.
,
Marczewski M.
,
Kowalski M.
,
Jastrzębski C.
), p. 701-704
article:
Magnetic Specific Heat of (Cd_{1-x-y}Zn_{y}Mn_{x})_{3}As_{2}
(
Bednarski H.
,
Cisowski J.
,
Schmitt D.
,
Voiron J.
,
Portal J.
,
Lubczyński W.
), p. 705-708
article:
Indirect Exchange in Band-Inverted Heterojunctions of IV-VI Semimagnetic Compounds
(
Dugaev V.
,
Litvinov V.
,
Oszwałdowski M.
), p. 709-712
article:
Photoluminescence Properties of Porous Silicon Prepared by Electrochemical Etching of Si Epitaxial Layer
(
Nossarzewska-Orłowska E.
,
Brzozowski A.
), p. 713-716
article:
Hot-Electron Effects in High-Resistivity InSb
(
Ašmontas S.
,
Subačius L.
,
Valušis G.
), p. 717-720
article:
Photovoltaic Effect on PbTe p-n Junction in the Presence of Magnetic Field
(
Le K.
,
Grodzicka E.
,
Witkowska B.
,
Story T.
,
Gałązka R.
), p. 721-724
article:
On the Symmetry of the Sulfur Pair-Related Defect in Silicon
(
Bennebroek M.
,
Zakrzewski A.
,
Frens A.
,
Schmidt J.
), p. 725-728
article:
Concentration Anomalies of Properties in Pb_{1-x}Ge_{x}Te Solid Solutions
(
Rogacheva E.
,
Sinelnik N.
,
Nashchekina O.
), p. 729-732
article:
Defects of Non-Stoichiometry and Dynamic Stability of SnTe Crystal Lattice
(
Rogacheva E.
,
Sinelnik N.
,
Nashchekina O.
,
Popov V.
,
Lobkovskaya T.
), p. 733-736
article:
Magnetoresistance of n-CdTe in the "Persistent" State
(
Kossacki P.
,
Karpierz K.
), p. 737-740
article:
Pressure Dependence of the Schottky Barrier Heights in Al/AlGaAs Junctions
(
Dobaczewski L.
,
Langer J.
,
Missous M.
), p. 741-744
article:
Magnetic Properties of Molecular Beam Epitaxy Grown High x Cd_{1-x}Mn_{x}Te
(
Sawicki M.
,
De Groot P.
,
Brummell M.
,
Tomka G.
,
Ashenford D.
,
Lunn B.
), p. 745-748
article:
Interband Absorption in InGaAs/GaAs Quantum Well at High Hydrostatic Pressure
(
Sosin T.
,
Perlin P.
,
Trzeciakowski W.
,
Tober R.
), p. 749-752
article:
ZnS/ZnSe Superlattices under Pressure
(
Gorczyca I.
,
Christensen N.
), p. 753-756
article:
Photo-ESR Study of the DX to Shallow Donor Conversion in Te Doped Al_{x}Ga_{1-x}As
(
Surma M.
,
Żytkiewicz Z.
,
Fronc K.
,
Stalinga P.
,
Godlewski M.
), p. 757-760
article:
Visible Luminescence from Porous Silicon
(
Bała W.
,
Firszt F.
,
Nossarzewska-Orłowska E.
,
Brzozowski A.
,
Orłowski B.
,
Kowalski B.
,
Guziewicz E.
), p. 761-764
article:
35×4 Substates of DX Centers in AlGaAs:Si
(
Ostermayer G.
,
Brunthaler G.
,
Stöger G.
,
Jantsch W.
,
Wilamowski Z.
), p. 765-768
article:
Alloy Splitting of the Te-DX States in Al_{x}Ga_{1-x}As
(
Ostermayer G.
,
Jantsch W.
,
Dobosz D.
,
Żytkiewicz Z.
,
Wilamowski Z.
), p. 769-772
article:
Electron Paramagnetic Resonance of Cr in PbTe
(
Story T.
,
Wilamowski Z.
,
Grodzicka E.
,
Witkowska B.
,
Dobrowolski W.
), p. 773-775
article:
In Situ Monitoring of Electroepitaxial Growth of Thick AlGaAs Layers
(
Żytkiewicz Z.
), p. 777-780
article:
Second Harmonic Generation in Spin-Glass Microstructures and Fabrication of Microstructures in IV-VI Epilayers
(
Grabecki G.
,
Dietl T.
,
Cieplak M.
,
Plesiewicz W.
,
Lenard A.
,
Skośkiewicz T.
,
Kamińska E.
,
Piotrowska A.
,
Żarecka R.
,
Springholz G.
,
Bauer G.
), p. 781-784
article:
Growth of Ternary and Quaternary ZnSe Compounds with Transition Metals by Chemical Vapor Transport
(
Janik E.
,
Grasza K.
,
Mycielski A.
,
Bąk-Misiuk J.
,
Kachniarz J.
), p. 785-788
article:
X-Ray Topographic Investigation of Cellular Structure and its Relation to another Defects in Various Types of GaAs Single-Crystals
(
Wierzchowski W.
,
Mazur K.
), p. 789-794
article:
Magnetization Relaxation in a Four-Level System
(
Witowski A.
), p. 795-797
article:
Magnetization Relaxation in CdMnS
(
Witowski A.
,
Kutter C.
,
Mac W.
,
Wyder P.
), p. 798-800
article:
Mechanism of Thermal Interaction of In with GaAs
(
Barcz A.
,
Adamczewska J.
,
Baranowski J.
,
Kwiatkowski S.
), p. 801-803
article:
Shallow Ohmic Contact System to n-GaAs
(
Kamińska E.
,
Piotrowska A.
,
Piotrowski T.
,
Barcz A.
,
Guziewicz M.
,
Adamczewska J.
,
Kwiatkowski S.
), p. 804-806
article:
On the Pinning of the Fermi Level by Germanium A_{1}^{0/+} Deep Donor State in GaAs Codoped with Ge and Te
(
Słupiński T.
,
Nowak G.
,
Przybytek J.
,
Stępniewski R.
), p. 807-811
article:
Effect of Interface on the Spinodal Decomposition of GaInPAs Solid Solutions during Liquid Phase Heteroepitaxy
(
Olchowik J.
), p. 812-816
article:
Inelastic Electron Scattering in Double-Barrier Resonant Tunneling Structure Revealed with Photoexcitation
(
Figielski T.
,
Mąkosa A.
,
Wosiński T.
,
Harness P.
,
Singer K.
), p. 817-819
article:
New Donor State of S Symmetry
(
Bednarek S.
,
Adamowski J.
), p. 820-822
article:
Luminescence Quantum Efficiency of Mn^{2+} States in ZnSe:Mn as Studied by means of Photoacoustic Spectroscopy
(
Męczyńska H.
,
Łęgowski S.
,
Dąbrowska W.
,
Popielarski M.
,
Ogielski Z.
,
Zakrzewski J.
), p. 823-825
article:
Molecular Beam Epitaxy of Al_{x}Ga_{1-x}Sb and Al_{x}Ga_{1-x}As: New Donor Doping Sources
(
Dobaczewski L.
,
Missous M.
,
Singer K.
,
Żytkiewicz Z.
), p. 826-828
article:
On the Possible Origin of Large Value of Magnetic Anisotropy Constant in PbSnMnTe Mixed Crystals
(
Łusakowski A.
,
Story T.
,
Gałązka R.
), p. 829-831
article:
Impurity Self-Screening
(
Wilamowski Z.
,
Przybylińska H.
), p. 832-834
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