Structure and Transport Characteristics of Tunnel Junctions with Hybrid Semiconductor Barriers with Quantum Dots

• Authors: V. Shaternik , A. Shapovalov , T. Prikhna , O. Suvorov , M. Skorik , A. Shaternik , V. Bondarchuk , E. Zubov
• Languages of publication: EN

Abstracts

EN

We propose to realize MoRe/SiO_x(W)/MoRe hybrid junctions by using self-organization effects for the creation of quantum dots (tungsten clusters) in the semiconductor barriers consisting of a mixture of silicon and silicon oxide. Current-voltage characteristics of the MoRe/SiO_x(W)/MoRe samples have been measured in a wide voltage range from -900 to 900 mV at temperatures from 4.2 to 77 K. At low temperatures and for a comparatively small W content in the hybrid barrier, the heterostructures exhibited current-voltage curves of an unusual shape. Single or several current peaks caused by electron tunneling through the allowed states in the barrier have been observed in the transport characteristics. With increasing temperature, superconducting fluctuations in the MoRe electrodes become unimportant, and the current-voltage curve of a heterostructure follows the Ohm law. At last, we present theoretical description of the charge transport in such inhomogeneous systems with account of many-electron processes.

Keywords

EN

74.50.+r; 74.81.-g

Discipline

• 74.81.-g: Inhomogeneous superconductors and superconducting systems, including electronic inhomogeneities
• 74.50.+r: Tunneling phenomena; Josephson effects(for SQUIDs, see 85.25.Dq; for Josephson devices, see 85.25.Cp; for Josephson junction arrays, see 74.81.Fa)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2018
• Volume: 133
• Issue: 4
• Pages: 1060-1064

Dates

published

2018-04

Contributors

author

V. Shaternik

• G.V. Kurdyumov Institute for Metal Physics, Kyiv 03142, Ukraine

author

A. Shapovalov

• V. Bakul Institute for Superhard Materials, Kyiv 07074, Ukraine

author

T. Prikhna

• V. Bakul Institute for Superhard Materials, Kyiv 07074, Ukraine

author

O. Suvorov

• G.V. Kurdyumov Institute for Metal Physics, Kyiv 03142, Ukraine

author

M. Skorik

• G.V. Kurdyumov Institute for Metal Physics, Kyiv 03142, Ukraine

author

A. Shaternik

• V. Bakul Institute for Superhard Materials, Kyiv 07074, Ukraine

author

V. Bondarchuk

• G.V. Kurdyumov Institute for Metal Physics, Kyiv 03142, Ukraine

author

E. Zubov

• G.V. Kurdyumov Institute for Metal Physics, Kyiv 03142, Ukraine
• Vasyl' Stus Donetsk National University, Vinnytsia 21021, Ukraine

References

• [1] T.A. Prikhna, W. Gawalek, Ya.M. Savchuk, V.M. Tkach, N.I. Danilenko, M. Wendt, J. Dellith, H. Weber, M. Eisterer, V.E. Moshchil, N.V. Sergienko, A.V. Kozyrev, P.A. Nagorny, A.P. Shapovalov, V.S. Melnikov, S.N. Dub, D. Litzkendorf, T. Habisreuther, Ch. Schmidt, A. Mamalis, V. Sokolovsky, V.B. Sverdun, F. Karau, A. Starostina, Physica C 470, 935 (2010), doi: 10.1016/j.physc.2010.02.064
• [2] T.A. Prikhna, W. Gawalek, Ya.M. Savchuk, N.V. Sergienko, V.E. Moshchil, V. Sokolovsky, J. Vajda, V.N. Tkach, F. Karau, H. Weber, M. Eisterer, A. Joulain, J. Rabier, X. Chaud, M. Wendt, J. Dellith, N.I. Danilenko, T. Habisreuther, S.N. Dub, V. Meerovich, D. Litzkendorf, P.A. Nagorny, L.K. Kovalev, Ch. Schmidt, V.S. Melnikov, A.P. Shapovalov, A.V. Kozyrev, V.B. Sverdun, J. Kosa, A.V. Vlasenko, Acta Phys. Pol. A 117, 7 (2010), doi: 10.12693/APhysPolA.117.7
• [3] V. Lacquaniti, C. Cassiago, N. De Leo, M. Fretto, A. Sosso, P. Febvre, V. Shaternik, A. Shapovalov, O. Suvorov, M. Belogolovskii, P. Seidel, IEEE Trans. Appl. Supercond. 26, 1100505-1 (2016), doi: 10.1109/TASC.2016.2535141
• [4] V.E. Shaternik, A.P. Shapovalov, A.Y. Suvorov, N.A. Skoryk, M.A. Belogolovskii, Low Temp. Phys. 42, 426 (2016), doi: 10.1063/1.4951668
• [5] V.E. Shaternik, A.P. Shapovalov, T.A. Prikhna, O.Yu. Suvorov, M.A. Skorik, V.I. Bondarchuk, V.E. Moshchil, IEEE Trans. Appl. Supercond. 27, 1800507 (2017), doi: 10.1109/TASC.2016.2636255
• [6] V. Shaternik, A. Shapovalov, M. Belogolovskii, A. Suvorov, S. Döring, S. Schmidt, P. Seidel, Mater. Res. Exp. 1, 026001 (2014), doi: 10.1088/2053-1591/1/2/026001
• [7] H. Fritzsche, Amorphous Silicon and Related Materials, World Sci., Chicago 1989
• [8] E.E. Zubov, Phil. Mag. 98, 329 (2018), doi: 10.1080/14786435.2017.1407499
• [9] G.D. Mahan, Many-Particle Physics, 3rd ed., Springer, New York 2000, doi: 10.1007/978-1-4757-5714-9
• [10] R. Landauer, Philos. Mag. 21, 863 (1970), doi: 10.1080/14786437008238472
• [11] W.L. McMillan, Phys. Rev. 175, 537 (1968), doi: 10.1103/PhysRev.175.537
• [12] V.M. Pan, V.P. Gorishnyak, E.M. Rudenko, V.E. Shaternik, M.V. Belous, S.A. Koziychuk, F.I. Korzhinsky, Cryogenics 23, 258 (1983), doi: 10.1016/0011-2275(83)90146-7
• [13] M.I. Tsindlekht, V.M. Genkin, G.I. Leviev, I. Felner, O. Yuli, I. Asulin, O. Millo, M.A. Belogolovskii, N.Yu. Shitsevalova, Phys. Rev. B 78, 024522 (2008), doi: 10.1103/PhysRevB.78.024522
• [14] M.A. Belogolovskii, Cent. Eur. J. Phys. 7, 304 (2009), doi: 10.2478/s11534-009-0012-1
• [15] V.M. Svistunov, M.A. Belogolovskii, A.I. Khachaturov, Usp. Fiz. Nauk 163, 61 (1993), doi: 10.3367/UFNr.0163.199302c.0061
• [16] R. Comin, A. Damascelli, Annu. Rev. Condens. Matter Phys. 7, 369 (2016), doi: 10.1146/annurev-conmatphys-031115-011401

Identifiers

DOI

10.12693/APhysPolA.131.1060