Origin of Point Defects in β-Ga₂O₃ Single Crystals Doped with Mg²⁺ Ions

• Authors: A. Luchechko , V. Vasyltsiv , L. Kostyk , O. Tsvetkova
• Languages of publication: EN

Abstracts

EN

Optical absorption and photoconductivity investigations of nominal pure and Mg²⁺ doped β-Ga₂O₃ single crystals have been carried out. Additional bands in the UV (3.6-4.6 eV) and near-IR (0.4-1.2 eV) spectral regions were found in optical absorption and photoconductivity spectra. A correlation between Mg²⁺ doping, annealing in oxygen atmosphere as well as optical absorption and photoconductivity bands were established in gallium oxide. Electronic transitions from shallow traps and F-centers were observed in the IR spectral region (0.4-1.2 eV). Absorption and photoconductivity in the UV region are related to deep acceptor levels created by native defects and impurities.

Keywords

EN

61.72.-y; 78.20.-e; 72.40.+w

Discipline

• 78.20.-e: Optical properties of bulk materials and thin films(for optical properties related to materials treatment, see 81.40.Tv; for optical materials, see 42.70-a; for optical properties of superconductors, see 74.25.Gz; for optical properties of rocks and minerals, see 91.60.Mk; for optical properties of specific thin films, see 78.66.-w)
• 61.72.-y: Defects and impurities in crystals; microstructure(for radiation induced defects, see 61.80.-x; for defects in surfaces, interfaces, and thin films, see 68.35.Dv and 68.55.Ln; see also 85.40.Ry Impurity doping, diffusion, and ion implantation technology; for effects of crystal defects and doping on superconducting transition temperature, see 74.62.Dh)
• 72.40.+w: Photoconduction and photovoltaic effects

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2018
• Volume: 133
• Issue: 4
• Pages: 811-815

Dates

published

2018-04

Contributors

author

A. Luchechko

• Department of Sensor and Semiconductor Electronics, Ivan Franko National University of Lviv, Tarnanavskogo Str. 107, Lviv 79017, Ukraine

author

V. Vasyltsiv

• Department of Sensor and Semiconductor Electronics, Ivan Franko National University of Lviv, Tarnanavskogo Str. 107, Lviv 79017, Ukraine

author

L. Kostyk

• Department of Sensor and Semiconductor Electronics, Ivan Franko National University of Lviv, Tarnanavskogo Str. 107, Lviv 79017, Ukraine

author

O. Tsvetkova

• Department of Sensor and Semiconductor Electronics, Ivan Franko National University of Lviv, Tarnanavskogo Str. 107, Lviv 79017, Ukraine

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Identifiers

DOI

10.12693/APhysPolA.131.811