Charge Carrier Dynamics in Ga_{1-x}Mn_{x}As Studied by Resistance Noise Spectroscopy

• Authors: M. Lonsky , J. Teschabai-Oglu , K. Pierz , S. Sievers , H. Schumacher , Y. Yuan , R. Böttger , S. Zhou , J. Müller
• Languages of publication: EN

Abstracts

EN

We report on electronic transport measurements of the magnetic semiconductor Ga_{1-x}Mn_{x}As, whereby the defect landscape in various metallic thin films (x=6%) was tuned by He-ion irradiation. Changes in the distribution of activation energies, which strongly determine the low-frequency 1/f-type resistance noise characteristics, were observed after irradiation and can be explained by deep-level traps residing in the As sublattice. Various other kinds of crystalline defects such as, for instance, Mn interstitials, which possibly form nanoscale magnetic clusters with a fluctuating spin orientation, also contribute to the 1/f noise and can give rise to random telegraph signals, which were observed in films with x=7%. In addition, we neither find evidence for a magnetic polaron percolation nor any features in the noise near the Curie temperature.

Keywords

EN

75.50.Pp; 73.50.Td; 73.50.-h; 73.61.-r; 64.60.ah; 61.72.-y

Discipline

• 73.50.Td: Noise processes and phenomena
• 75.50.Pp: Magnetic semiconductors
• 64.60.ah: Percolation
• 73.61.-r: Electrical properties of specific thin films(for optical properties of thin films, see 78.20.-e and 78.66.-w; for magnetic properties of thin films, see 75.70.-i)
• 73.50.-h: Electronic transport phenomena in thin films(for electronic transport in mesoscopic systems, see 73.23.-b; see also 73.40.-c Electronic transport in interface structures; for electronic transport in nanoscale materials and structures, see 73.63.-b)
• 61.72.-y: Defects and impurities in crystals; microstructure(for radiation induced defects, see 61.80.-x; for defects in surfaces, interfaces, and thin films, see 68.35.Dv and 68.55.Ln; see also 85.40.Ry Impurity doping, diffusion, and ion implantation technology; for effects of crystal defects and doping on superconducting transition temperature, see 74.62.Dh)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2018
• Volume: 133
• Issue: 3
• Pages: 520-522

Dates

published

2018-03

Contributors

author

M. Lonsky

• Institute of Physics, Goethe-University Frankfurt, 60438 Frankfurt (M), Germany

author

J. Teschabai-Oglu

• Institute of Physics, Goethe-University Frankfurt, 60438 Frankfurt (M), Germany

author

K. Pierz

• Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig, Germany

author

S. Sievers

• Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig, Germany

author

H. Schumacher

• Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig, Germany

author

Y. Yuan

• Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany

author

R. Böttger

• Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany

author

S. Zhou

• Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany

author

J. Müller

• Institute of Physics, Goethe-University Frankfurt, 60438 Frankfurt (M), Germany

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Identifiers

DOI

10.12693/APhysPolA.133.520