Pack Siliconizing of Ti6Al4V Alloy

• Authors: G. Celebi Efe , M. İpek , C. Bindal , S. Zeytin
• Languages of publication: EN

Abstracts

EN

In this study, it was aimed to produce titanium silicide layer on Ti6Al4V by a simple, cheap and efficient method of pack siliconizing. Siliconizing was performed in a pack containing a mixture composed of SiO₂ powder as siliconizing source, pure Al powder as a reducer for siliconizing, NH₄Cl as an activator and Al₂O₃ powder as filler, at 1000°C for 8, 10 and 12 hours in open atmospheric furnace. Optical microscope and SEM-EDS studies indicate that the morphology of silicide layers has smooth, dense and layered nature. The presence of phases, confirmed by XRD analyses, reveals that the silicide layers formed at 1000°C are composed of TiSi₂, Ti₃Si₅, TiN, TiO₂ and SiO₂ compounds. Silicide layer thickness was increased with increasing process time and ranged from 7.5 to 9.0 μm. Hardness of silicide layers, measured by Vickers indentation, is over 2100 HV.

Keywords

EN

81.65.Lp; 81.65.-b

Discipline

• 81.65.Lp: Surface hardening: nitridation, carburization, carbonitridation
• 81.65.-b: Surface treatments(for surface preparation and lithography in microelectronics, see 85.40.-e)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2017
• Volume: 132
• Issue: 3
• Pages: 760-762

Dates

published

2017-09

Contributors

author

G. Celebi Efe

• Sakarya University, Engineering Faculty, Department of Metallurgy and Materials Engineering, Esentepe Campus, 54187 Sakarya, Turkey
• Sakarya University, Biomedical, Magnetic and Semi Conductive Materials Research Center (BIMAS-RC), Esentepe

author

M. İpek

• Sakarya University, Engineering Faculty, Department of Metallurgy and Materials Engineering, Esentepe Campus, 54187 Sakarya, Turkey

author

C. Bindal

• Sakarya University, Engineering Faculty, Department of Metallurgy and Materials Engineering, Esentepe Campus, 54187 Sakarya, Turkey
• Sakarya University, Biomedical, Magnetic and Semi Conductive Materials Research Center (BIMAS-RC), Esentepe

author

S. Zeytin

• Sakarya University, Engineering Faculty, Department of Metallurgy and Materials Engineering, Esentepe Campus, 54187 Sakarya, Turkey

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Identifiers

DOI

10.12693/APhysPolA.132.760