Investigation of Degradation of Electrical Properties after Thermal Oxidation of p-Type Cz-Silicon Wafers

• Authors: M. Maoudj , D. Bouhafs , N. Bourouba , N. Khelifati , A. El Amrani , R. Boufnik , A. Hamida Ferhat
• Languages of publication: EN

Abstracts

EN

In this study we conducted thermal oxidation of Czochralski p-type <100> silicon wafers. The oxidation was carried out at temperatures in the range of 850-1000°C, in a gas mixture of N₂:O₂, in order to deposit a thin layer (10 nm) of thermal silicon dioxide (SiO₂), generally used in the surface passivation of solar cells. The measurements of effective minority carriers lifetime τ_{eff} using the quasi-steady-state photoconductance have shown degradation of different samples after oxidation process. The calculation of surface recombination velocity after the oxidation process at different temperatures, gave the same value of 40 cm s¯¹, showing a low surface recombination velocity and, therefore, a good surface passivation. Finally, a study based on sample illumination technique, allowed us to conclude that our samples are dominated by bulk Shockley-Read-Hall recombination, caused by Fe-related centers, thereby causing the degradation of the lifetime of minority carriers.

Keywords

EN

72.20.Jv; 81.16.Pr; 88.40.jj

Discipline

• 88.40.jj: Silicon solar cells
• 72.20.Jv: Charge carriers: generation, recombination, lifetime, and trapping
• 81.16.Pr: Micro- and nano-oxidation(see also 82.37.Np Single molecule reaction kinetics)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2017
• Volume: 132
• Issue: 3
• Pages: 725-727

Dates

published

2017-09

Contributors

author

M. Maoudj

• CRTSE, Technology Research Center of Semiconductors for the Energetics, 02, Bd Frantz Fanon. BP 140 Alger 7 Merveilles, Algiers, Algeria
• Ferhat Abbas University, Faculty of Technology, Department of Electronics, Setif, Algeria

author

D. Bouhafs

• CRTSE, Technology Research Center of Semiconductors for the Energetics, 02, Bd Frantz Fanon. BP 140 Alger 7 Merveilles, Algiers, Algeria

author

N. Bourouba

• Ferhat Abbas University, Faculty of Technology, Department of Electronics, Setif, Algeria

author

N. Khelifati

• CRTSE, Technology Research Center of Semiconductors for the Energetics, 02, Bd Frantz Fanon. BP 140 Alger 7 Merveilles, Algiers, Algeria

author

A. El Amrani

• CRTSE, Technology Research Center of Semiconductors for the Energetics, 02, Bd Frantz Fanon. BP 140 Alger 7 Merveilles, Algiers, Algeria

author

R. Boufnik

• CRTSE, Technology Research Center of Semiconductors for the Energetics, 02, Bd Frantz Fanon. BP 140 Alger 7 Merveilles, Algiers, Algeria

author

A. Hamida Ferhat

• Ferhat Abbas University, Faculty of Technology, Department of Electronics, Setif, Algeria

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Identifiers

DOI

10.12693/APhysPolA.132.725