Photochemical Conversion of CO₂ into Methyl Alcohol Using SiC Micropowder under UV Light

• Authors: F. Azzouz , S. Kaci , I. Bozetine , A. Keffous , M. Trari , S. Belhousse , S. Aissiou-Bouanik
• Languages of publication: EN

Abstracts

EN

In our study, microparticles SiC powder was investigated as a catalyst for CO₂ photoreduction into methanol under UV light. The photochemical conversion of methanol was studied as function of time of exposition, the concentration and the grain size of the catalyst. The selectivity of the used catalyst to promote methanol formation was noticed. It was noticed also that the grain size and concentration have a great impact on the photochemical conversion of CO₂ to methanol. The best yield of methanol was achieved when a concentration of 0.75 M of SiC powder of 17 μm grain size and an exposure time to UV light of 2 h where assured. Maximum molar concentration of methanol achieved was under UV irradiation of 365 nm. Therefore, the catalytic property of silicon carbide has proved its efficiency in the photochemical conversion of CO₂ into alcohol thus far under UV light.

Keywords

EN

SiC micropowder; CO₂ photoreduction; methanol

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2017
• Volume: 132
• Issue: 3
• Pages: 479-483

Dates

published

2017-09

Contributors

author

F. Azzouz

• Research Center on Semiconductor Technology for Energetic, Thin Films, Surface and Interface Division, CMSI, CRTSE, 2 Bd Frantz Fanon, PB 140 7M, Algiers, Algeria
• Hydrocarbures and Chemistry Faculty, M'hamed Bougara University, Independence Av., 35000, Boumerdes, Algeria

author

S. Kaci

• Research Center on Semiconductor Technology for Energetic, Thin Films, Surface and Interface Division, CMSI, CRTSE, 2 Bd Frantz Fanon, PB 140 7M, Algiers, Algeria

author

I. Bozetine

• Research Center on Semiconductor Technology for Energetic, Thin Films, Surface and Interface Division, CMSI, CRTSE, 2 Bd Frantz Fanon, PB 140 7M, Algiers, Algeria

author

A. Keffous

• Research Center on Semiconductor Technology for Energetic, Thin Films, Surface and Interface Division, CMSI, CRTSE, 2 Bd Frantz Fanon, PB 140 7M, Algiers, Algeria

author

M. Trari

• University of Science and Technology Houari Boumediene, Chemistry Faculty, BP 32 El Alia, 16111 Bab Ezzouar, Algiers, Algeria

author

S. Belhousse

• Research Center on Semiconductor Technology for Energetic, Thin Films, Surface and Interface Division, CMSI, CRTSE, 2 Bd Frantz Fanon, PB 140 7M, Algiers, Algeria

author

S. Aissiou-Bouanik

• Research Center on Semiconductor Technology for Energetic, Thin Films, Surface and Interface Division, CMSI, CRTSE, 2 Bd Frantz Fanon, PB 140 7M, Algiers, Algeria

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Identifiers

DOI

10.12693/APhysPolA.132.479