Anisotropic Phase Field Model of Heteroepitaxial Growth

• Authors: Dieu Hoang , M. Beneš , J. Stráský
• Languages of publication: EN

Abstracts

EN

We study the heteroepitaxial growth of thin layers by means of the modified phase-field model with the incorporated anisotropy. The influence of elastic and surface energies on the layer growth is considered. For numerical solution of the model, an explicit numerical scheme based on the finite element method is employed. The obtained computational results with various anisotropy settings demonstrate the anisotropic thin-layer pattern growth.

Keywords

EN

81.10.Aj; 05.70.Ln; 81.40.Jj; 81.30.Fb

Discipline

• 81.30.Fb: Solidification
• 05.70.Ln: Nonequilibrium and irreversible thermodynamics(see also 82.40.Bj Oscillations, chaos, and bifurcations in physical chemistry and chemical physics)
• 81.40.Jj: Elasticity and anelasticity, stress-strain relations
• 81.10.Aj: Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation(see also 61.50.Nw Crystal stoichiometry)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2015
• Volume: 128
• Issue: 4
• Pages: 520-522

Dates

published

2015-10

Contributors

author

Dieu Hoang

• Department of Mathematics, Faculty of Nuclear Sciences and Physical Engineering, Czech Technical University in Prague, Trojanova 13, Prague, Czech Republi

author

M. Beneš

• Department of Mathematics, Faculty of Nuclear Sciences and Physical Engineering, Czech Technical University in Prague, Trojanova 13, Prague, Czech Republi

author

J. Stráský

• Department of Physics of Materials, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, Prague, Czech Republic

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Identifiers

DOI

10.12693/APhysPolA.128.520