Undulator-Like Radiation and N² Effects in Semiconductor Microstructures with Grating

• Authors: I. Tralle , P. Zięba
• Languages of publication: EN

Abstracts

EN

In the article the cooperative N²-effects are considered, that is the radiation whose power is ım N², where N is the number of emitters which in this case is equal to the number of electrons in a bunch. The suggested effects are the result of combining two effects: the Gunn-effect in GaAs and undulator-like radiation, or "pumping wave" acting on the electrons and which is the result of undulator field, while the second is the backward effect of radiation which is produced by electrons moving within such microundulator. It is very probable that the effects can be used for the developing of a new semiconductor-based room temperature source of the THz-radiation.

Keywords

EN

41.60.-m; 42.50.Gy; 73.61.Ey; 73.40.kp; 73.50.Fq

Discipline

• 42.50.Gy: Effects of atomic coherence on propagation, absorption, and amplification of light; electromagnetically induced transparency and absorption
• 73.61.Ey: III-V semiconductors
• 41.60.-m: Radiation by moving charges
• 73.50.Fq: High-field and nonlinear effects

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2015
• Volume: 128
• Issue: 2
• Pages: 228-230

Dates

published

2015-08

Contributors

author

I. Tralle

• Faculty of Mathematics and Natural Sciences, University of Rzeszów, S. Pigonia 1, 35-310 Rzeszów, Poland

author

P. Zięba

• Faculty of Mathematics and Natural Sciences, University of Rzeszów, S. Pigonia 1, 35-310 Rzeszów, Poland

References

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Identifiers

DOI

10.12693/APhysPolA.128.227