Strain Designed Magnetic Properties of III-V Magnetic Semiconductors

• Authors: S. Stagraczyński , C. Jasiukiewicz , V. Dugaev , J. Berakdar
• Languages of publication: EN

Abstracts

EN

We present the theoretical analysis of a possibility of the magnetic anisotropy control using various components of the strain tensor in III-V magnetic semiconductor. We used the Kane model of the valence bands for the numerical simulations of the influence of strain on the Mn doped GaAs valence band structure. Calculating numerically the energy structure of deformed GaMnAs magnetic semiconductor, we also found the total energy of electron system as a function of orientation of the average magnetization vector. Our calculations show how the direction of the magnetization easy axis can be effectively rotated by using different types of deformation.

Keywords

EN

75.50.Pp; 75.30.Gw; 75.80.+q

Discipline

• 75.30.Gw: Magnetic anisotropy
• 75.80.+q: Magnetomechanical effects, magnetostriction(for magnetostrictive devices, see 85.70.Ec)
• 75.50.Pp: Magnetic semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2015
• Volume: 128
• Issue: 2
• Pages: 219-221

Dates

published

2015-08

Contributors

author

S. Stagraczyński

• Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, Karl-Freiherr-von-Fritsch Str. 3, 06120 Halle (Saale), Germany

author

C. Jasiukiewicz

• Department of Physics, Rzeszów University of Technology, al. Powstańców Warszawy 6, 35-959 Rzeszów, Poland

author

V. Dugaev

• Department of Physics, Rzeszów University of Technology, al. Powstańców Warszawy 6, 35-959 Rzeszów, Poland
• Departamento de Física and CeFEMA, Instituto Superior Técnico, Universidade de Lisboa, av. Rovisco Pais, 1049-001 Lisbon, Portugal

author

J. Berakdar

• Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, Karl-Freiherr-von-Fritsch Str. 3, 06120 Halle (Saale), Germany

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Identifiers

DOI

10.12693/APhysPolA.128.218