Elastic Scattering in Kane Type Semiconductor Circular Dots

• Authors: A. Babanlı , E. Artunç , T. Kasalak
• Languages of publication: EN

Abstracts

EN

In this paper we have investigated the scattering of electrons by a circular narrow penetrable δ-type potential barrier in A^{3}B^{5} type semiconductors by using three-band Kane model. By using the Kane equations with the continuous conditions of the wave functions and flux discontinuous at the interface of two circular dots, we have analytically calculated the total cross-section and the Boltzmann conductivity for the semiconductor quantum rings with delta potential barrier. It has been shown that the quasi-bound states appear as peaks in the cross-section.

Keywords

EN

73.22.Pr; 73.20.D-

Discipline

• 73.22.Pr: Electronic structure of graphene

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2015
• Volume: 127
• Issue: 3
• Pages: 811-814

Dates

published

2015-03

received

2014-06-04

(unknown)

2014-12-09

(unknown)

2015-01-27

Contributors

author

A. Babanlı

• Institute of Physics, Azerbaijan National Academy of Sciences, 370143 Baku, Azerbaijan
• Department of Physics, University of Süleyman Demirel, 32260 Isparta, Turkey

author

E. Artunç

• Department of Physics, University of Süleyman Demirel, 32260 Isparta, Turkey

author

T. Kasalak

• Department of Informatics, University of Akdeniz, 07058 Antalya, Turkey

References

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Identifiers

DOI

10.12693/APhysPolA.127.811