Study of p-Layer Doping Density and Surface Band Bending on the Indium Tin Oxide/Hydrogenated Amorphous Silicon Heterojunction Solar Cells

• Authors: D. Rached , H. Madani Yssad
• Languages of publication: EN

Abstracts

EN

A solar cell (indium tin oxide (ITO)/p-doped amorphous silicon (p-a-Si:H)/intrinsic polymorphous silicon (i-pm-Si:H)/n-doped crystalline silicon (n-c-Si)) simulation, focused on p-layer doping density NA and surface band bending E_{sbb} at the interface ITO/p-layer has been performed. Despite the deterioration of p-layer material quality with doping density, the reduced bulk recombination was found to compensate for the increased loss in the p-layer. An increase of p-layer doping density NA and contact barrier height φ_{b0} (variation of the surface band bending E_{sbb}) leads to an increase of the efficiency of heterojunction with intrinsic thin layer solar cells.

Keywords

EN

73.61.Jc; 71.20.Mq; 88.40.hj; 88.40.jj

Discipline

• 73.61.Jc: Amorphous semiconductors; glasses
• 88.40.jj: Silicon solar cells
• 71.20.Mq: Elemental semiconductors
• 88.40.hj: Efficiency and performance of solar cells

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2015
• Volume: 127
• Issue: 3
• Pages: 767-769

Dates

published

2015-03

received

2013-10-16

(unknown)

2014-06-20

Contributors

author

D. Rached

• Laboratoire de Physique des Plasmas, Matériaux Conducteurs et leurs Applications, U.S.T.O.M.B. B.P.1505, El M'nouar, Oran, Algérie

author

H. Madani Yssad

• Laboratoire LTE Département de Génie Mécanique, E.N.S.E.T B.P.1523, Route d'Es Senia, 31000 Oran, Algérie

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Identifiers

DOI

10.12693/APhysPolA.127.767