Dependence of Exchange Bias Field on Thickness of Antiferromagnetic Layer in NiFe/IrMn Structures

• Authors: I. Dzhun , N. Chechenin , K. Chichay , V. Rodionova
• Languages of publication: EN

Abstracts

EN

Magnetic properties of ferromagnetic/antiferromagnetic thin-films structures for spin-valve applications have been studied. Multilayer structures of Ta/Co/IrMn/Ta and Ta/FeNi/IrMn/Ta were deposited on Si substrate at room temperature by DC magnetron sputtering. Thickness of the antiferromagnetic layer changed from 10 to 50 nm. The coercive force was found to be non-monotonic function of the antiferromagnetic layer thickness. The exchange bias for 30-50 nm antiferromagnetic layers (73 Oe) is about 10 Oe larger than for 10-20 nm antiferromagnetic layers. Moreover, it was demonstrated that the alternative sequence of the deposition (antiferromagnetic layer on the top or below the ferromagnetic layer) leads to dramatic changes of structures magnetic properties.

Keywords

EN

75.30.Gw; 77.55.-g

Discipline

• 75.30.Gw: Magnetic anisotropy
• 77.55.-g: Dielectric thin films(see also 85.50.-n Dielectric, ferroelectric, and piezoelectric devices; for microelectronics applications, see 85.40.-e; for methods of film deposition, see 81.15.-z)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2015
• Volume: 127
• Issue: 2
• Pages: 555-557

Dates

published

2015-02

Contributors

author

I. Dzhun

• Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Leninskie gory 1(2), 119991 Moscow, Russia

author

N. Chechenin

• Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Leninskie gory 1(2), 119991 Moscow, Russia

author

K. Chichay

• Innovation Park and Institute of Physics and Technology, Immanuel Kant Baltic Federal University, Nevskogo 14, 236041 Kaliningrad, Russia

author

V. Rodionova

• Innovation Park and Institute of Physics and Technology, Immanuel Kant Baltic Federal University, Nevskogo 14, 236041 Kaliningrad, Russia
• National University of Science and Technology "MISIS", Leninskiy pr. 4, 119049 Moscow, Russia

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Identifiers

DOI

10.12693/APhysPolA.127.555