Kondo-Fano Effect in Double Quantum Dot Side Attached to a Pair of Wires

• Authors: D. Krychowski , S. Lipiński
• Languages of publication: EN

Abstracts

EN

Electron tunneling through a double quantum dot side coupled to a pair of leads is examined in finite-U slave boson mean field approach. Both the two-impurity Kondo regime at half filling and one-and three-electron Kondo effects are analyzed. Special attention is paid to the case when one of the dots is coupled to ferromagnetic lead and another to nonmagnetic. Depending on the gate voltage, the same or opposite sign of polarizations of conductance of the leads is observed.

Keywords

EN

72.10.Fk; 73.21.-b; 73.22.-f; 73.23.-b

Discipline

• 73.22.-f: Electronic structure of nanoscale materials and related systems
• 73.21.-b: Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems(for electron states in nanoscale materials, see 73.22.-f)
• 73.23.-b: Electronic transport in mesoscopic systems
• 72.10.Fk: Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2015
• Volume: 127
• Issue: 2
• Pages: 487-489

Dates

published

2015-02

Contributors

author

D. Krychowski

• Institute of Molecular Physics, Polish Academy of Sciences, M. Smoluchowskiego 17, 60-179 Poznań, Poland

author

S. Lipiński

• Institute of Molecular Physics, Polish Academy of Sciences, M. Smoluchowskiego 17, 60-179 Poznań, Poland

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Identifiers

DOI

10.12693/APhysPolA.127.487