Dual-Frequency Plasma Enhanced Chemical Vapor Deposition of Diamond-Like Carbon Thin Films

• Authors: R. Jamshidi , S. Hosseini , Y. Ahmadizadeh
• Languages of publication: EN

Abstracts

EN

Dual-frequency plasma enhanced chemical vapor deposition was used to grow diamond-like carbon thin films from CH_4, H_2 gas mixture. The effects of radio frequency, microwave power, and gas ratio were investigated. Various species have been identified in the CH_4-H_2 plasma using optical emission spectroscopy and their effects on film properties have been studied. Increasing the RF power to 400 W, the variation trend of refractive index and CH, C_2 intensity ratios change beyond the 300 W, but the growth rate shows the continuous increasing character from 6 to 11.6 nm/min. Increasing the hydrogen content in the system, the intensity ratio of CH, C_2, CH^{+} and growth rate show decreasing tendency and the refractive index rises from 1.98 to 2.63. Adding MW produced plasma to the system grows the refractive index to 2.88 and growth rate to 10.8 nm/min. The water contact angle rises from 58.95° to 73.74° as the RF power increases to 300 W but begins to reduce until 400 W. In addition, the contact angle shows a growing tendency by increasing the hydrogen flow to the chamber. In addition, the structures of the films were investigated by the Raman spectroscopy.

Keywords

EN

81.15.Gh

Discipline

• 81.15.Gh: Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)(for chemistry of MOCVD, see 82.33.Ya in physical chemistry and chemical physics)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2012
• Volume: 122
• Issue: 1
• Pages: 230-235

Dates

published

2012-07

received

2011-08-21

(unknown)

2012-03-18

Contributors

author

R. Jamshidi

• Islamic Azad University, South Tehran Branch, Tehran, Iran

author

S. Hosseini

• Laser and Plasma Research Institute, Shahid Beheshti University, G.C., Evin, Tehran, Iran

author

Y. Ahmadizadeh

• Faculty of Science, University of Aeronautical Science and Technology, Tehran, Iran

References

• 1. S. Aisenberg, R. Chabot, J. Appl. Phys. 42, 2953 (1971)
• 2. K. Enke, Thin Solid Films 80, 227 (1981)
• 3. J. Zelez, J. Vac. Sci. Technol. A, Vac. Surf. Films 1, 305 (1983)
• 4. Handbook of Industrial Diamonds and Diamond Films, Eds. M.A. Prelas, G. Popovici, L.K. Bigelov, Marcel Dekker, New York 1997, pp. 147-192, 227-253, 1023-1147
• 5. K. Wang, H. Liang, J. Martin, T. Le Mogne, Appl. Phys. Lett. 91, 051918 (2007)
• 6. R. Paul, S. Das, S. Dalui, R. Gayen, R. Roy, R. Bhar, A. Pal, J. Phys. D, Appl. Phys. 41, 055309 (2008)
• 7. D.L. Pappas, K.L. Saenger, J. Burley, W. Kraków, J.J. Cuomo, T. Gu, R.W. Collins, J. Appl. Phys. 71, 5675 (1992)
• 8. N. Mutsukura, S. Inoue, Y. Machi, J. Appl. Phys. 72, 43 (1992)
• 9. D.R. McKenzie, D. Muller, B.A. Pailthorpe, Phys. Rev. Lett. 67, 773 (1991)
• 10. P. Reinke, W. Jacob, W. Möller, J. Appl. Phys. 74, 1354 (1993)
• 11. J.E. Bourée, C. Godet, B. Drévillon, R. Etemadi, T. Heitz, J. Cernogora, J.L. Fave, J. Non-Cryst. Solids 198-200, 623 (1996)
• 12. M. Weiler, S. Sattel, T. Giessen, K. Jung, H. Erhardt, V.S. Veerasamy, J. Robertson, Phys. Rev. B 53, 1594 (1993)
• 13. S. Goldsmith, E. Çetinörgü, R.L. Boxman, Thin Solid Films 517, 5146 (2009)
• 14. K.L. Bhatia, A.K. Sharma, J. Non-Cryst. Solids 61, 285 (1986)
• 15. D.M. Roessler, Brit. J. Appl. Phys. 16, 1119 (1965)
• 16. D. Adlien, J. Laurikaitien, V. Kopustinskas, Š. Meškinis, V. Šablinskas, Mater. Sci. Eng. B 152, 91 (2008)
• 17. A. Grill, V. Patel, K.I. Saenger, C. Jahnes, S.A. Cohen, A.G. Schrott, D.C. Edeistein, J.R. Paraszczak, Mater. Res. Soc. Symp. Proc. 433, 155 (1997)
• 18. A. Grill, V. Patel, Diam. Relat. Mater. 4, 62 (1994)
• 19. M. Smietana, J. Szmidt, M. Korwin-Pawlowski, N. Miller, A. Elmustafa, Diam. Relat. Mater. 17, 1655 (2008)
• 20. M.R. Wertheimer, M. Moisan, J. Vac. Sci. Technol. A 3, 2643 (1985)
• 21. C. Schwärzler, O. Schnabl, J. Laimer, H. Störi, Plas. Chem. Plas. Proc. 16, 173 (1996)
• 22. J. Angus, C. Hayman, Science 241, 913 (1988)
• 23. L. Xiuqiong, C. Junfang, F. Silie, L. Wei, Z. Maoping, S. Lei, Y. Chunlin, Plas. Sci. Technol. 9, 444 (2007)
• 24. E.C. Rangel, N.C. da Cruz, M.E. Kayama, R.C.C. Rangel, N. Marins, S.F. Durrant, Plas. Polym. 9, 1 (2004)
• 25. H.C. Lin, S.T. Shiue, Y.M. Chou, Surf. Coat. Technol. 202, 5360 (2008)
• 26. R.N. Wenzel, Ind. Eng. Chem. 28, 988 (1936)
• 27. X.B. Yan, T. Xu, S.S. Yue, H.W. Liu, Q.J. Xue, S.R. Yang, Diam. Relat. Mater. 14, 1342 (2005)
• 28. E.F. Hare, E.G. Shafrin, W.A. Zisman, J. Phys. Chem. 58, 236 (1954)
• 29. P. Ha, D. McKenzie, M. Bilek, S. Kwok, P. Chu, B. Tay, Surf. Coat. Technol. 201, 6734 (2007)
• 30. B. Druz, I. Zaritskiy, Y. Yevtukhov, A. Konchits, M. Valakh, B. Shanina, S. Kolesnik, I. Yanchuk, Y. Gromovoy, Diam. Relat. Mater. 13, 1592 (2004)

Identifiers

DOI

10.12693/APhysPolA.122.230