Electrical Behaviour of Nanostructured Porous Silicon

• Authors: M. Azim-Araghi , S. Ashrafabadi , F. Kanjuri
• Languages of publication: EN

Abstracts

EN

The electrical behaviour of porous silicon layers has been investigated on one side of p-type silicon with various anodization currents, electrolytes, and times. Electron microscopy reveals the evolution of porous silicon layer morphology with variation in anodization time. In this work electrical conductivity of bulk silicon and porous layer which is formed by electrochemical etching is compared due to I-V measurements and calculation of activation energy. We have also studied the dependence of porous silicon conductivity on fabrication conditions. Also the effect of the temperature on conduction of porous silicon at different frequencies is investigated. At last dependence of capacitance on the temperature was probed at 10^2 - 10^5 Hz frequency range.

Keywords

EN

73.30.+y; 73.40.Sx; 73.50.-h; 73.90.+f; 73.63.Rt; 68.37.Hk

Discipline

• 73.63.Rt: Nanoscale contacts
• 73.50.-h: Electronic transport phenomena in thin films(for electronic transport in mesoscopic systems, see 73.23.-b; see also 73.40.-c Electronic transport in interface structures; for electronic transport in nanoscale materials and structures, see 73.63.-b)
• 68.37.Hk: Scanning electron microscopy (SEM) (including EBIC)
• 73.40.Sx: Metal-semiconductor-metal structures
• 73.90.+f: Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures (Restricted to new topics in section 73)
• 73.30.+y: Surface double layers, Schottky barriers, and work functions(see also 82.45.Mp Thin layers, films, monolayers, membranes in electrochemistry; see also 87.16.D- Membranes, bilayers, and vesicles in biological physics)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2012
• Volume: 122
• Issue: 1
• Pages: 170-173

Dates

published

2012-07

received

2011-09-27

(unknown)

2012-04-15

Contributors

author

M. Azim-Araghi

• Department of Physics, Tarbiat Moallem University, 43 Mofateh Av., Tehran, Iran

author

S. Ashrafabadi

• Department of Physics, Tarbiat Moallem University, 43 Mofateh Av., Tehran, Iran

author

F. Kanjuri

• Department of Physics, Tarbiat Moallem University, 43 Mofateh Av., Tehran, Iran

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Identifiers

DOI

10.12693/APhysPolA.122.170