Compression Changes in Electrical Resistance and Critical Temperature of Nb_{1-x}Se_2Sn_x Single Crystals

• Authors: M. Obolenskiy , A. Zavgorodniy , R. Vovk , Z. Nazyrov , I. Goulatis , M. Januszczyk , J. Latosińska
• Languages of publication: EN

Abstracts

EN

In this work we investigate the influence of hydrostatic pressure (up to 12 kbar) on the critical parameters of Nb_{1-x}Se_2Sn_x (x=0.1 and x=0.15) single crystals. It is shown that a change in the density of states at the Fermi level brings the main contribution to the increase in T_{c} under pressure. Under the effect of hydrostatic pressure, the phonon spectrum is shifted to higher frequencies (narrowed). The estimated Debye temperature is consistent with those obtained from the heat capacity measurements in NbSe_2 single crystals. It is shown that upon increasing hydrostatic pressure the mean free path increases and Nb_{1-x}Se_2Sn_x should be considered as the pure limit in the Ginzburg-Landau theory.

Keywords

EN

74.25.Fy; 74.62.Fj

Discipline

• 74.62.Fj: Effects of pressure

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2012
• Volume: 122
• Issue: 1
• Pages: 159-161

Dates

published

2012-07

received

2011-05-20

(unknown)

2012-03-09

Contributors

author

M. Obolenskiy

• V.N. Karazin Kharkiv National University, 4 Svoboda Sq., 61077 Kharkov, Ukraine

author

A. Zavgorodniy

• V.N. Karazin Kharkiv National University, 4 Svoboda Sq., 61077 Kharkov, Ukraine

author

R. Vovk

• V.N. Karazin Kharkiv National University, 4 Svoboda Sq., 61077 Kharkov, Ukraine

author

Z. Nazyrov

• V.N. Karazin Kharkiv National University, 4 Svoboda Sq., 61077 Kharkov, Ukraine

author

I. Goulatis

• V.N. Karazin Kharkiv National University, 4 Svoboda Sq., 61077 Kharkov, Ukraine

author

M. Januszczyk

• Adam Mickiewicz University, Umultowska 85, 61-614 Poznań, Poland

author

J. Latosińska

• Adam Mickiewicz University, Umultowska 85, 61-614 Poznań, Poland

References

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Identifiers

DOI

10.12693/APhysPolA.122.159